4216C Search Results

LTE-4206

Contextual Info: LITEM f GaAlAs T -l STANDARD S4> INFRARED EMITTING DIODE LTE-4206/4206C/4216/4216C FEATURES • S E L E C T E D T O SP E C IF IC O N -LIN E IN T E N SIT Y A N D R A D IA N T IN T E N SIT Y R A N G E S . • L O W C O S T P L A ST IC E N D L O O K IN G P A C K A G E.

LTE-4206C

Abstract: 4206 LTE-4206 LTR-4206 LTE4216C standard of LTE
Contextual Info: GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206

KM4216C258

Contextual Info: K M 4216C 258 C M O S VID E O RAM 2 5 6 K x 16 B it CM O S Video R A M T h e RAM a rra y c o n sists o f 5 1 2 bit row s of 8 1 9 2 bits. FEATURES It o p e ra te s like a co n ve n tio n a l 2 5 6 K x 1 6 C M O S DRAM . • Dual p o rt A rc h ite c tu re T h e RAM p o rt has a w rite per b it m ask ca p a bility.

"Video RAM"

Abstract: KM4216V256 KM4216C256
Contextual Info: 4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.

4216C528

Contextual Info: DENSE-PAC MICROSYSTEMS /k-Denstts High Density Memory Device 8 Megabit CMOS VIDEO RAM D P0512X16MGY5-CM PRELIMINARY DESCRIPTION: The D P 0512X16MCY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.

cmos dynamic ram 256kx1

Abstract: 256Kx1 dram pinout SQ721 KM4216C528
Contextual Info: DENSE-PAC /U-Dcnstos High Density Memory Device M IC R O SYSTEM S 8 Megabit CMOS VIDEO RAM DP0512X16MGY5-CM PRELIM IN ARY D ESC R IPTIO N : P IN -O U T D IA G RA M The D P0 5 1 2X16MCY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and

Contextual Info: PRELIMINARY 4216C258/L/F, KM4216V258/I-/F 256K 16 Bit CM OS Video RAM x FEATURES GENERAL DESCRIPTION Dual port Architecture 2S6K x 16 bits RAM port 512 x 16 bits SAM port Performance range: _ t-• —_ _ Speed Parameter — -RAM access tim e tRAC

Contextual Info: - p+,1 Max. Vacuum area Q,84Min. R EV ECN. NO. A EDIQÄO INICIAL B NOVO CÓDIGO i . , i 1,51 APP DATE Unit: mm; Tolerances: ±0.05 mm Reference dimension for PCB layout T E C H N IC A L C H AR AC TER ISTIC S 1 General Characteristics Dimension 15.70L x 16.40W x 2 60H mm

Contextual Info: 4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

KM4216C257

Abstract: M491
Contextual Info: PRELIMINARY Y 4216C257/L/F, K M 4216V 257/L /F ^ CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K v 16 bits RAM port 512 X 16 bits SAM port • Performance range: The Samsung 4216C/V257 is a CMOS 256K x 16 bit

Contextual Info: 4216C258 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. • Dual port Architecture The RAM port has a write per bit mask capability. 256K x 16 bits RAM port

KM4216C256

Abstract: KM4216V256 SQ15
Contextual Info: 4216C/V256 CMOS VIDEO RAM 2 5 6 K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. ,u Dual port Architecture 256K x 16 bits RAM port 512 x 16 bits SAM port The RAM port has a write per bit mask capability.

v256t

Contextual Info: PRELIMINARY 'f. 4216C256/L/F, KM4216V256/L/FX CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K X 16 bits RAM port 512 x 16 bits SAM port • Performance range: The Samsung 4216C/V256 is a CMOS 2 5 6 K x 16 bit

STATIC RAM 256KX16

Abstract: "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 256KX16 512Kx1
Contextual Info: 16Mx36, 50 - 70ns, TSTACK 30A165-33 B M-Densus High Density Memory Device 8 Megabit CMOS VIDEO RAM DPO512X16MGY5-CM PRELIMINARY DESCRIPTION: The DPO512X16MGY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.

Contextual Info: ^ ^ 4216C255/L/F' KM4216V255/L/F PRELIMINARY CMOS VIDEO RAM 2 5 6K x 16 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 2S6K x 16 bits RAM port 512 x 16 bits SAM port • Performance range: The Samsung 4216C/V255 is a CMOS 256Kx 16 bit

LT 8834

Abstract: LT 7232 TS-3401
Contextual Info: "a l p h a n u m e r i c in d e x L B L -9 3 1 6 G . L BL -9429G 5-11 5-14 L T C - 2 7 2 3 Y . 10-21 L TC -3710G 14-3

"Video RAM"

Contextual Info: 4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 C M OS DRAM. The RAM port has a write per bit m ask capability. * Dual port Architecture 256K x 16 bits RAM port