4200A Search Results

Contextual Info: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

DS4217-2

Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

MAX4200

Contextual Info: * MAX4200 CLOSED-LOOP GAIN AVCL=+1 RESPONSE TEST CIRCUIT * 4200AVCL.CIR * XAR1 1 2 3 4 MAX4200 * +IN VCC VEE OUT VCC 2 0 5V VEE 3 0 -5V VIN 1 0 AC 50mV RL 4 0 100 *CL 1 0 20p .OPTIONS RELTOL=.01 .AC DEC 10 10k 10G .PROBE .LIB MAX4200.FAM .END

Contextual Info: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.

O-4000AT

Abstract: 414x
Contextual Info: ROHS-Compliant Product O-4000AT Series 1. Specification Frequency range: 5.0 . 100.0 MHz Type: Supply voltage V S: O-4100AT O-4200AT 5.0 V ± 5 % 3.3 V ± 5 % 410x 420x 411x 421x 412x 422x 413x 423x 414x 424x 41x1 41x2 41x3 42x1 42x2 42x3 Frequency stability vs. temperature options:

DS4217-2

Contextual Info: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC

DSF11060SG

Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

1000A 100V power diode

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

Contextual Info: SAMSUNG ELECTRONICS 42E INC D ? cib4142 O Ü l l l S T KM 23C 4200A 4 • CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144x18 • Fast access time: 120ns (max.)

a 3760

Abstract: DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18
Contextual Info: DRD420D DRD420D Rectifier Diode Target Information DS5517-1.0 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1800V ■ High Surge Capability IF AV 4200A IFSM 70000A APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control

GT3180

Abstract: GS7070 VC45210-PBC80 helium 210-80 vc45210 VIRATA helium 210-80 VC-45210-PBC80 virata helium VIRATA helium gt3180 G992
Contextual Info: Product Specification of ADW-4200 Networking & Communication Product Specification ADSL Wireless VPN / Firewall Router ADW-4200A / ADW-4200B Version 1.0 This document contains confidential proprietary information and is property of PLANET. The contents of this

SFB1060-01

Abstract: SFB1030-01 ach 50 sfb1030 SFB1060-03 aircraft SFB1030-03
Contextual Info: Fast-Acting Aircraft Limiter ACH Series Dimensions - in mm A D BUSS C 30 ACH B Catalog Symbol: ACH Fast-Acting Ratings: Amps: 1 to 60A Volts: 208Vac 125Vdc Interrupting Ratings: 6000A @ 120Vac 4200A @ 208Vac 6000A @ 125Vac 0.98" .425" (25.0mm) (10.8mm) 0.19"

RC4200

Abstract: RC4200A rc4200 raytheon HC1200 RM4200 NJM4200 RV4200 150M
Contextual Info: - 190- RC4 2 0 0 n S H Ïü R ay th eo r T 0= 2 5 ° c • —22 V : —5 5 ~ + 125cC (R M 4 2 0 0 /R M 4 2 0 0 A ) —5mA - 4 0 ~ + 8 5 t : ( R V 4 2 0 0 /R V 4200A ) 0 ~ + 7 0 t : ( R C 4200/R C 4200A ) •f*D 500mW : —6 5 ~ + 1 5 0 cC (RM4200/4200A)

1000A 100V power diode

Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

a 3760

Abstract: AN4839 DRD420D DRD420D12 DRD420D14 DRD420D16 DRD420D18
Contextual Info: DRD420D DRD420D Rectifier Diode Target Information DS5517-1.0 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1800V ■ High Surge Capability IF AV 4200A IFSM 70000A APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control

5900AS

Abstract: 1600AS TP3B476 6500AS 6300AS 2500AS 6700as TP3E107 3800as
Contextual Info: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability

Contextual Info: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES

IGBT module FZ 1200 R17

Abstract: FZ400R17KE3 fz 1600 r17 ke3
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

bsm 256

Abstract: igbt module bsm 300 Al2O3
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 300 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability

MS28937-40

Abstract: ACH30 MS28937-05 MS28937-60 MS28938-25 MS28937-10 MS28937-50 MS28938-15 MIL-F-5373 ACH15
Contextual Info: Bussmann Aircraft Limiter ACH Fast-Acting Dimensional Data All other tolerances ± 0.005 in (± 0.13) mm A D BUSS Catalog Symbol: ACH Fast-Acting Ampere Rating: 1 to 60 Amperes Voltage Rating: 208 Volts AC 125 Volts DC Interrupting Rating: 6000A @ 120 VAC

NTE6108

Abstract: "Battery Chargers" NTE6102 NTE6103 NTE6104 NTE6105 NTE6109
Contextual Info: NTE6102 thru NTE6109 Industrial Rectifier, 550A Features: D Standard and Reverse Polarities D Flag Lead and Stud Top Terminals D High Surge Current Ratings D High Rated Blocking Voltages Applications: D Welders D Battery Chargers D Electrochemical Refining

BEL 1240

Contextual Info: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %