HL25T Search Results
HL25T Price and Stock
onsemi FGHL25T120RWD1200V - Rail/Tube (Alt: FGHL25T120RWD) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FGHL25T120RWD | Tube | 19 Weeks | 450 |
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FGHL25T120RWD | 20 Weeks | 30 |
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FGHL25T120RWD | 21 Weeks | 30 |
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onsemi AFGHL25T120RWIGBT - Automotive Grade 1200 V 25 A - Rail/Tube (Alt: AFGHL25T120RW) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AFGHL25T120RW | Tube | 32 Weeks | 450 |
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AFGHL25T120RW | 450 |
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AFGHL25T120RW | 33 Weeks | 30 |
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onsemi AFGHL25T120RWDIGBT - Automotive Grade 1200 V 25 A - Rail/Tube (Alt: AFGHL25T120RWD) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AFGHL25T120RWD | Tube | 26 Weeks | 450 |
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AFGHL25T120RWD | 2,956 | 1 |
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AFGHL25T120RWD | 28 Weeks | 30 |
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onsemi AFGHL25T120RLTransistor GP BJT 1200V 48A 3-Pin TO-247 Rail - Rail/Tube (Alt: AFGHL25T120RL) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AFGHL25T120RL | Tube | 63 Weeks | 450 |
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Get Quote | |||||
onsemi AFGHL25T120RHTransistor GP BJT 1200V 48A 3-Pin TO-247 Rail - Rail/Tube (Alt: AFGHL25T120RH) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AFGHL25T120RH | Tube | 63 Weeks | 450 |
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Get Quote | |||||
HL25T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: M IC R O C O M P U T E R and P E R IP H E R A L L S I ’s M O S L S I Memories Electrical Characteristics T a=25"C Type No. Function Item Sym bol V il “H ” Level Output Voltage ROM Vcc=+5V mW V 0 .8 VoH Io h - Z O /tA VOL IoL = l - 8 m A Access Time |
OCR Scan |
mn2332n2758 | |
MN116PContextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS IC, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. (T a = 2 5 °C ) M a xim u m Ratings F u n c tio n (T a = 2 5 °C ) Ite m C o n d itio n Sym bol m in . ty p . m ax. U n it Video Cameras M N 115 |
OCR Scan |
hl25tcmn115pmn116pmn6063+1 | |
2AN6551Contextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. F u n c tio n (T a = 2 5 °C ) VTE= —18— h0.3V Ite m Sym bol Signal Delay Time Vo= —18 — 1-0.3V Input Signal 1’requencv T opr=-20~+60t |
OCR Scan |
mn3007n3007n3008n3009+5 |