41V4 Search Results

Contextual Info: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: SFORMERS {Selection Charts_ . “ £ <§• - PI 240 X 480 PRIMARY VOLTS — 120/240 SECONDARY VOLTS — FOUR WINDING KVA ' CA TALO G NO. A P P R O X . D IM E N S IO N S * (In c h es ) ' H eig h t .05 T-1 -5 3 0 04 0 . 1 0 • T-1 -53(X)5

Contextual Info: KM4 1 V 4 0 0 0 D T CMOS DRAM ELECTRONICS 4M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: DRY-TYPE D ^R lB U TIO N T 208 PRIMARY VOLT I KVA APPROX. C! SAS IMS Inc: s ~Depti " Height Wit :li CATALOG NO. I 2- 13 14C- ‘ S 1.5 T-2-53141-1S 120/240 SE iiGNOARY I OLTS - 5 0.50 - 2 .6 2 .! THREE WINDING — 1 0 , 60 Hz APPROX. . SHIP WEIGHT TYPE MTG.

Contextual Info: CMOS DRAM 41V4000C/CL/CLL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRA C tC A C tR C 60ns 15ns 110ns 41V4000C/CL7CLL-7 i 70ns 20ns 130ns I 41V4000C/C LVCLL-8 I 20ns 150ns 41V4000C/CL/CLL-6

Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh Fast Page Mode P/N: 41V4260DSJ-06 41V4260DSJ-07 41V4260DTT-06 41V4260DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

Contextual Info: 41V4000C/CL/CLL CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES Th e Sam sung K M 4 1 V 4 0 0 0 C /C L /C L L is a high speed C M O S 4 ,1 9 4 ,3 0 4 bit x 1 D yn am ic R an d o m A ccess • Performance range: tRA C

MN41V4265DTT-06

Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh EDO Page Mode P/N: 41V4265DSJ-06 41V4265DSJ-07 41V4265DTT-06 41V4265DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a