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    41NC Search Results

    41NC Datasheets (1)

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    TPF1441NC
    		3peak Incorporated 52M HD Composite Video Filter Driver with Clamped input Comparator Original PDF
    SF Impression Pixel

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    Samsung Electro-Mechanics CIM03U241NC

    FERRITE BEAD 240 OHM 0201 1LN
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    EDAC Inc 627-47W1224-1NC

    CONN D-SUB PLG 47POS PNL MT SLDR
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    EDAC Inc 628-24W7224-1NC

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    EDAC Inc 628-27W2224-1NC

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    EDAC Inc 628-43W2224-1NC

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    41NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diesel transistor

    Abstract: FDB3652 FDI3652 FDP3652
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDB3652 FDP3652 FDI3652 O-263AB diesel transistor FDI3652 PDF

    FDB3652

    Abstract: FDI3652 FDP3652 RG-106
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDB3652 FDP3652 FDI3652 O-263AB FDI3652 RG-106 PDF

    Contextual Info: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE8N70FP 250uA O-220 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    SMK1260

    Abstract: SMK12
    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D Ordering Information


    Original     		SMK1260WF SMK1260 O-220F-3L SMK1260 SMK12 PDF

    Smk1360

    Abstract: smk1360fd TO-220F-3L SMK1360F
    Contextual Info: SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=600V Min.  Low gate charge: Qg=41nC (Typ.)  Low drain-source On resistance: RDS(on)=0.65Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information


    Original     		SMK1360FD SMK1360 O-220F-3L SDB20D45 28-JUL-11 KSD-T0O058-000 Smk1360 smk1360fd TO-220F-3L SMK1360F PDF

    SMK1265

    Abstract: SMK1265F 12A 650V MOSFET 146PF
    Contextual Info: SMK1265F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=650V Min. • Low Crss : Crss=14.6pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.8Ω(Max.) Ordering Information Type NO.


    Original     		SMK1265F SMK1265 O-220F-3L KSD-T0O039-000 SMK1265 SMK1265F 12A 650V MOSFET 146PF PDF

    Contextual Info: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE10N60 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Smk1360

    Contextual Info: SMK1360CI Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65 (Max.) D G Ordering Information Type N o. M a r k in g Pa ck a ge Code


    Original     		SMK1360CI SMK1360 KSD-T0V001-001 Smk1360 PDF

    Smk1360

    Contextual Info: SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=600V Min.  Low gate charge: Qg=41nC (Typ.)  Low drain-source On resistance: RDS(on)=0.65  100% avalanche tested  RoHS compliant device (Max.) Ordering Information


    Original     		SMK1360FD SMK1360 O-220F-3L SDB20D45 28-JUL-11 KSD-T0O058-000 Smk1360 PDF

    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDB3652 FDP3652 FDI3652 PDF

    RG-106

    Abstract: h7 229 mosfet FDB3652 FDI3652 FDP3652
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDB3652 FDP3652 FDI3652 O-263AB FDI3652 RG-106 h7 229 mosfet PDF

    Smk1360

    Abstract: IAR13 TC-2513 41NC SMK13
    Contextual Info: SMK1360CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=14.6pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		SMK1360CI SMK1360 KSD-T0V001-000 Smk1360 IAR13 TC-2513 41NC SMK13 PDF

    Contextual Info: ICE10N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE10N65 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    SMK1265

    Contextual Info: SMK1265F Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.8 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		SMK1265F SMK1265 O-220F-3L SDB20D45 KSD-T0O039-003 SMK1265 PDF

    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D Ordering Information


    Original     		SMK1260WF SMK1260W O-220F-3L PDF

    Contextual Info: ICE10N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE10N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00 PDF

    SMK1260

    Abstract: SMK1260F marking code 12A SMK12
    Contextual Info: SMK1260F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=13.8pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.65Ω(Max.) Ordering Information Type NO.


    Original     		SMK1260F SMK1260 O-220F-3L KSD-T0O034-000 SMK1260 SMK1260F marking code 12A SMK12 PDF

    Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		KDB3652 FDB3652) O-263 PDF

    smk1260

    Abstract: SMK1260F MOSFET 600v 60a
    Contextual Info: SMK1260F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		SMK1260F SMK1260 O-220F-3L SDB20D45 KSD-T0O034-002 smk1260 SMK1260F MOSFET 600v 60a PDF

    Contextual Info: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS… IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		IRF7809AVPbF-1 IRF7809AV IRF7809AVTRPbF-1 D-020D PDF

    FDP3652

    Abstract: FDB3652 RG-106
    Contextual Info: N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


    Original     		O-263AB FDB3652 FDP3652 RG-106 PDF

    Contextual Info: SMK1265FD Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.8 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		SMK1265FD SMK1265 O-220F-3L SDB20D45 KSD-T0O083-000 PDF

    SMK1260

    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65 (Max.) D Ordering Information Type N o. M a r k ing SMK1260WF


    Original     		SMK1260WF SMK1260 O-220F-3L SMK1260 PDF

    SMK1360F

    Abstract: Smk1360
    Contextual Info: SMK1360F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		SMK1360F SMK1360 O-220F-3L SDB20D45 KSD-T0O055-001 SMK1360F Smk1360 PDF