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    Beta Electric

    Beta Electric BE7241NC/48

    Shoes; Size: 48; black; leather; slip,impact; Basic
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    Beta Electric BE7241NC/38

    Shoes; Size: 38; black; leather; slip,impact; Basic
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    Beta Electric BE7241NC/42

    Shoes; Size: 42; black; leather; slip,impact; Basic
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    TME BE7241NC/42 1
    • 1 $22.74
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    Beta Electric BE7241NC/37

    Shoes; Size: 37; black; leather; slip,impact; Basic
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    Beta Electric BE7241NC/41

    Shoes; Size: 41; black; leather; slip,impact; Basic
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    TME BE7241NC/41 1
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    41NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diesel transistor

    Abstract: FDB3652 FDI3652 FDP3652
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3652fdp3652fdi3652o-263ab+1diesel transistor PDF

    FDB3652

    Abstract: FDI3652 FDP3652 RG-106
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3652fdp3652fdi3652o-263ab+1rg-106 PDF

    Contextual Info: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ice8n70fp250uao-2200e-05+50e-040e-030e-020e-010e-00 PDF

    SMK1260

    Abstract: SMK12
    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D Ordering Information


    Original     		smk1260wfsmk1260o-220f-3lsmk12 PDF

    Smk1360

    Abstract: smk1360fd TO-220F-3L SMK1360F
    Contextual Info: SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=600V Min.  Low gate charge: Qg=41nC (Typ.)  Low drain-source On resistance: RDS(on)=0.65Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information


    Original     		smk1360fdsmk1360o-220f-3lsdb20d45+428-jul-11ksd-t0o058-000to-220f-3lsmk1360f PDF

    SMK1265

    Abstract: SMK1265F 12A 650V MOSFET 146PF
    Contextual Info: SMK1265F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=650V Min. • Low Crss : Crss=14.6pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.8Ω(Max.) Ordering Information Type NO.


    Original     		smk1265fsmk1265o-220f-3lksd-t0o039-000+212a 650v mosfet146pf PDF

    Contextual Info: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ice10n60250uao-2200e-06+60e-050e-040e-030e-020e-010e-00 PDF

    Smk1360

    Contextual Info: SMK1360CI Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65 (Max.) D G Ordering Information Type N o. M a r k in g Pa ck a ge Code


    Original     		smk1360cismk1360ksd-t0v001-001 PDF

    Smk1360

    Contextual Info: SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=600V Min.  Low gate charge: Qg=41nC (Typ.)  Low drain-source On resistance: RDS(on)=0.65  100% avalanche tested  RoHS compliant device (Max.) Ordering Information


    Original     		smk1360fdsmk1360o-220f-3lsdb20d45+228-jul-11ksd-t0o058-000 PDF

    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3652fdp3652fdi3652 PDF

    RG-106

    Abstract: h7 229 mosfet FDB3652 FDI3652 FDP3652
    Contextual Info: FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3652fdp3652fdi3652o-263ab+2rg-106h7 229 mosfet PDF

    Smk1360

    Abstract: IAR13 TC-2513 41NC SMK13
    Contextual Info: SMK1360CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=14.6pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		smk1360cismk1360ksd-t0v001-000iar13+3tc-251341ncsmk13 PDF

    Contextual Info: ICE10N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ice10n65250uao-2200e-06+60e-050e-040e-030e-020e-010e-00 PDF

    SMK1265

    Contextual Info: SMK1265F Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.8 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		smk1265fsmk1265o-220f-3lsdb20d45+1ksd-t0o039-003 PDF

    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D Ordering Information


    Original     		smk1260wfsmk1260wo-220f-3l PDF

    Contextual Info: ICE10N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ice10n65fp250uao-220100us+40e-060e-040e-020e-00 PDF

    SMK1260

    Abstract: SMK1260F marking code 12A SMK12
    Contextual Info: SMK1260F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=13.8pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.65Ω(Max.) Ordering Information Type NO.


    Original     		smk1260fsmk1260o-220f-3lksd-t0o034-000+2marking code 12asmk12 PDF

    Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		kdb3652fdb3652o-263 PDF

    smk1260

    Abstract: SMK1260F MOSFET 600v 60a
    Contextual Info: SMK1260F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		smk1260fsmk1260o-220f-3lsdb20d45+2ksd-t0o034-002mosfet 600v 60a PDF

    Contextual Info: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS… IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		irf7809avpbf-1irf7809avirf7809avtrpbf-1d-020d PDF

    FDP3652

    Abstract: FDB3652 RG-106
    Contextual Info: N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


    Original     		o-263abfdb3652fdp3652rg-106 PDF

    Contextual Info: SMK1265FD Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.8 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		smk1265fdsmk1265o-220f-3lsdb20d45+1ksd-t0o083-000 PDF

    SMK1260

    Contextual Info: SMK1260WF Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65 (Max.) D Ordering Information Type N o. M a r k ing SMK1260WF


    Original     		smk1260wfsmk1260o-220f-3l PDF

    SMK1360F

    Abstract: Smk1360
    Contextual Info: SMK1360F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) D G Ordering Information


    Original     		smk1360fsmk1360o-220f-3lsdb20d45+1ksd-t0o055-001 PDF