ICE10N65 Search Results
ICE10N65 Datasheets Context Search
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Contextual Info: ICE10N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
Original |
ice10n65250uao-2200e-06+6 | |
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Contextual Info: ICE10N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
Original |
ice10n65fp250uao-220100us+4 |