SDB20D45 Search Results

Contextual Info: SDB20D45D2 Schottky Barrier Rectifier LOW VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 4  Low power loss and High efficiency  Guard-ring for overvoltage protection  Dual common cathode rectifier 1  Full lead Pb -free and RoHS compliant device

Contextual Info: SDB20D45D2 Schottky Barrier Rectifier LOW VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 4  Low power loss and High efficiency  Guard-ring for overvoltage protection  Dual common cathode rectifier 1  Full lead Pb -free and RoHS compliant device

SDB20D45

Contextual Info: SDB20D45P Semiconductor Schottky Barrier Rectifier LOW VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  Guard-ring for overvoltage protection 1  Dual common cathode rectifier

Contextual Info: SDB20D45D2 Semiconductor Schottky Barrier Rectifier LOW VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  Guard-ring for overvoltage protection  Dual common cathode rectifier

Contextual Info: SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =1.23Ω (Typ.)  Low gate charge: Qg=10.5nC (Typ.)  Low reverse transfer capacitance: Crss=2pF (Typ.)  RoHS compliant device  100% avalanche tested

Contextual Info: SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.1Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6.3pF (Typ.)  Lower EMI noise  RoHS compliant device

Contextual Info: SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=35nC (Typ.)  Low reverse transfer capacitance: Crss=18pF (Typ.)  RoHS compliant device  100% avalanche tested

Contextual Info: SUN02A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =3.9Ω (Typ.)  Low gate charge: Qg=7.5nC (Typ.)  Low reverse transfer capacitance: Crss=5pF (Typ.)  Lower EMI noise  RoHS compliant device

SDB2080

Abstract: SDB2080PI SDB20D45
Contextual Info: SDB2080PI Semiconductor Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capacity 1  Dual common cathode rectifier 123  Full lead Pb -free and RoHS compliant device

SMK0965

Abstract: SDB20D45 TO-220F-3 SMK0
Contextual Info: SMK0965F Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS PIN Connection Features D • High Voltage: BVDSS=650V Min. • Low Crss : Crss=16pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.85Ω(Max.) G Ordering Information

SMK0270

Abstract: MARKING QG 6 PIN
Contextual Info: SMK0270F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=700V Min. Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=7.2nC(Typ.) Low RDS(on) : RDS(on)=6.3Ω(Max.) D G Ordering Information

HIGH VOLTAGE RECTIFIER

Abstract: sf10a200h
Contextual Info: SF10A200HPI Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

SMK1625

Abstract: SMK1625F
Contextual Info: SMK1625F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=250V Min. Low Crss : Crss=49pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) : RDS(on)=0.27Ω(Max.) D G Ordering Information

SMK630

Abstract: mosfet 45a 200v
Contextual Info: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

SMK1820

Abstract: SMK1820F Marking Code 18A
Contextual Info: SMK1820F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) : RDS(on)=0.17Ω(Max.) D G Ordering Information

SDB1080

Contextual Info: SDB1080PH Schottky Barrier Rectifier 80V, 10A POWER SCHOTTKY RECTIFIER Features  Low forward voltage drop  Low power loss and High efficiency  Low leakage current  High surge capacity Pin Configuration Pin 1: Cathode Pin 2: Anode  Full lead Pb -free and RoHS compliant device

SMK1060

Abstract: SMK1060Fj SMK1060G diode marking code 57
Contextual Info: SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75Ω(Max.) D G Ordering Information

SMK1060

Abstract: SMK1060F
Contextual Info: SMK1060F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75Ω(Max.) D G Ordering Information

Contextual Info: SUN0465F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.3Ω (Typ.) • Low gate charge: Qg=10nC (Typ.) • Low reverse transfer capacitance: Crss=4.7pF (Typ.) • RoHS compliant device

SDB20200

Abstract: SDB2020 SDB20200PI high power rectifier diode single
Contextual Info: SDB20200PI Semiconductor Schottky Barrier Rectifier HIGH VOLTAGE SCHOTTKY RECTIFIER Features y Low forward voltage drop y Low power loss and High efficiency y Low leakage current y Dual common cathode rectifier 1 y Full lead Pb -free and RoHS compliant device

Contextual Info: SMK0765WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=10pF(Typ.) Low gate charge : Qg=21nC(Typ.) Low RDS(on) : RDS(on)=1.4Ω(Max.) D G Ordering Information

54nc

Contextual Info: SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=550V @Tjmax  Low gate charge: Qg=54nC Typ.  Low drain-source On resistance: RDS(on)=0.3Ω (Max.)  RoHS compliant device  Available in Halogen free package

Contextual Info: SDB1545PH Schottky Barrier Rectifier 45V, 15A POWER SCHOTTKY RECTIFIER Features  Low forward voltage drop  Low power loss and High efficiency  Low leakage current  High surge capability Pin Configuration Pin 1: Cathode Pin 2: Anode  Full lead Pb -free and RoHS compliant device

Contextual Info: SDB15100PH Semiconductor Schottky Barrier Rectifier HIGH VOLTAGE SCHOTTKY RECTIFIER Features y Low forward voltage drop and leakage current y Low power loss and High efficiency y Guard-ring for overvoltage protection y High surge capability Cathode Anode y Full lead Pb -free and RoHS compliant device