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SUN04A60F Datasheets Context Search
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Contextual Info: SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.1Ω (Typ.) Low gate charge: Qg=12nC (Typ.) Low reverse transfer capacitance: Crss=6.3pF (Typ.) Lower EMI noise RoHS compliant device |
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SUN04A60F O-220F-3L SUN04A60 SDB20D45 09-JUL-14 KSD-T0O156-000 |