41DBM Search Results

41dBm

Abstract: BX7101 FP7101 TM7101 TN7101
Contextual Info: Available as: RF AMPLIFIER MODEL TM7101 TM7101, 4 Pin TO-8 T4 TN7101, 4 Pin Surface Mount (SM3) FP7101, 4 Pin Flatpack (FP4) BX7101,Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point. +41dBm (Typ.)

Contextual Info: E-pHEMT AE663 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 41dBm Output IP3 • 20dB Gain at 900MHz • 29dBm P1 dB • SOT-89 SMT Package • Single +5V Supply • Pb Free / RoHS Standard • Cellular, CDMA,W-CDMA, Wimax Drive or Pre-drive Amplifier

Contextual Info: Available as: RF AMPLIFIER TM9135 MODEL TM9135, 4 Pin TO-8 T4 TN9135, 4 Pin Surface Mount (SM3) FP9135, 4 Pin Flatpack (FP4) BX9135, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C „ „ „ „ Second Order Harmonic Intercept Point.+41dBm (Typ.)

TM7101

Abstract: low noise BX7101 FP7101 TN7101
Contextual Info: Available as: RF AMPLIFIER MODEL TM7101 TM7101, 4 Pin TO-8 T4 TN7101, 4 Pin Surface Mount (SM3) FP7101, 4 Pin Flatpack (FP4) BX7101,Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 ºC ! ! ! ! Second Order Harmonic Intercept Point. +41dBm (Typ.)

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications • PCS • mobile satellite service • UMTS Connectors SMA CASE STYLE: CW686 Model

Contextual Info: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 28.5dBm Linear Output Power 41dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package

M121747

Abstract: ZQL-1900MLNW ZQL-900MLN ZQL1900MLNW
Contextual Info: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW+ 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case CASE STYLE: CW686 Connectors Model Price Qty. SMA ZQL-1900MLNW+ $249.00 ea. 1-9 Applications + RoHS compliant in accordance

fet 741

Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
Contextual Info: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)

KP027J

Abstract: P0120007P RR0816
Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

Contextual Info: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz High OIP3/P1dB=+41dBm/ 28dBm  Single +5V Supply  Small 28-Pin, 6.0mmx6.0mm, MCM  Power-up Programming GND

3570 1301

Abstract: 3570 1301 053 3570 1301 051
Contextual Info: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

3570 1301 054

Abstract: FMM5822X 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic
Contextual Info: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three

BC 547 pnp

Abstract: ISO-14001 KP027J P0120002P P0120007P RR0816 Ids2590 toko 4437
Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package

Contextual Info: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at

Contextual Info: E-pHEMT AE663 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 41dBm Output IP3 • 20dB Gain at 900MHz • 29dBm P1 dB • SOT-89 SMT Package • Single +5V Supply • Pb Free / RoHS Standard • Cellular, CDMA,W-CDMA, Wimax Drive or Pre-drive Amplifier

41dBm

Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

FPD3000SOT89

Contextual Info: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

ED-4701

Abstract: FMM5822X "15 GHz" power amplifier 41dBm power amplifier mmic
Contextual Info: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three

EGN28B200IV-R

Abstract: JESD22-A114 S-Band Radar
Contextual Info: EGN28B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 230W min. @ Pin=12.6W (41dBm) •High Efficiency: 53%(typ.) @ Pin=12.6W (41dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power PidB=41dBm(TYP) @2.3GHz

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications Connectors SMA • PCS • mobile satellite service • UMTS CASE STYLE: CW686 Model Price

Contextual Info: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications • PCS • mobile satellite service • UMTS Connectors SMA CASE STYLE: CW686 Model Price