41B019 Search Results

FPN630

Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Contextual Info: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol

Contextual Info: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*

transistor TD-100 le

Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Contextual Info: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR PN2222N TN4033A
Contextual Info: TN4033A TN4033A C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

C461B

Abstract: D1162 B11B6
Contextual Info: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 1212111 21345164789AB1C9DABE1F112111 1 1!31"1 21F3FE1111 F1!"#8$1 2 12A#1C$$%&1%' % 1D%*%1

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR FPN530 FPN530A PN2222N TO-226-AE 226AE
Contextual Info: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol

CBVK741B019

Abstract: F63TNR NZT6728 PN2222N TN6728A
Contextual Info: TN6728A / NZT6728 TN6728A NZT6728 C E E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*

Contextual Info: TN6717A / NZT6717 NZT6717 TN6717A C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings*

Contextual Info: TN6729A / NZT6729 TN6729A NZT6729 C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings*

TIC 1160

Abstract: CBVK741B019 F63TNR MPSW3725 PN2222N MHz-400
Contextual Info: MPSW3725 MPSW3725 C TO-226 B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage

inter mediate

Abstract: CBVK741B019 F63TNR NZT6714 PN2222N TN6714A tic 223 V10400
Contextual Info: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR NZT6729 PN2222N TN6729A tic 223 PN2222A TRANSISTOR L7500 S7 em 223 TO-226-AE
Contextual Info: TN6729A / NZT6729 TN6729A NZT6729 C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings*

TN2905A

Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
Contextual Info: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

transistor tic 226

Abstract: CBVK741B019 F63TNR FPN330 FPN330A PN2222N
Contextual Info: FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR NZT6717 PN2222N TN6717A
Contextual Info: TN6717A / NZT6717 TN6717A NZT6717 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings*

Contextual Info: TN6726A / NZT6726 NZT6726 TN6726A C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings*

FPN660A

Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226
Contextual Info: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol

CBVK741B019

Abstract: F63TNR FPN430 FPN430A PN2222N
Contextual Info: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol

Contextual Info: TN6715A / NZT6715 NZT6715 TN6715A C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

Contextual Info: TN6728A / NZT6728 TN6728A NZT6728 C E E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*

TN2222

Contextual Info: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*

transistor A1 HB

Abstract: PN2222N EO70 CBVK741B019 F63TNR transistor k 0247 ad label information on the box
Contextual Info: TO-226AE Tape and Reel Data TO -226AE Packaging Conf iguratio n: Fi gur e 1.0 TAPE and REEL OPTION FSCINT Label sampl e See Fig 2.0 for va rious FAIRCHIL D S EMICONDUCTOR CORPORATION L OT: 41B019 PN2222N NSID: D/C1: QTY: Reeling Styles HTB:B 10000 SP EC: