417 - 162 TRANSISTOR Search Results

2n2222 -331 transistors

Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111

Contextual Info: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface

BU2725DX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand Vces pulses up to 1700V.

Contextual Info: CEP06N5/CEB06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 500V , 6.6A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

WJ-CA70-2

Abstract: WJ-CA70 WJA7 transistor rf m 2528 WJ-A70-2
Contextual Info: u u U A70-2 / SMA70-2 •H 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +38 dBm (TYP) LOW DC CURRENT: 25 mA (TYP) @ +15 Vdc Outline Drawings

IXFd50n20

Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

pin configuration of ic TL084

Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Contextual Info: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505

Contextual Info: Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

d 5072 transistor

Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
Contextual Info: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list

Contextual Info: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,

WJ-PA15/SMPA15

Abstract: WJ-PA15
Contextual Info: WJ-PA15/SMPA15 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER +27.0 dBm TYP. 10-500 MHz ♦ HIGH THIRD-ORDER I.P. +38 dBm (TYP.) ♦ MEDIUM GAIN: 13.5 dB (TYP.) ♦ HIGH DYNAMIC ARTICULATION +118 dB Outline Drawings

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

Contextual Info: gë3 Stanford Microdevices Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

FDP61N20

Abstract: FCp Series
Contextual Info: UniFET TM FDP61N20 200V N-Channel MOSFET Features Description • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 58 nC)

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

Contextual Info: UniFET TM FDP61N20 200V N-Channel MOSFET Features Description • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 58 nC)

Contextual Info: W J - A 7 - 2 1 S M A 7 - 2 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +35 dBm (TYP.) LOW DC CURRENT: 25 mA (TYP.) @ +15 Vdc Outline Drawings

PT 8519

Abstract: PT 4207 2SC4227 marking R34
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

NEC 7924

Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1