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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TI_BQ24721C_QFN_32P
Abstract: tps51620 INVENTEC 4250T PCMB0603T PCI7412 BQ24721C bq24721 ddr3_sodimm0 ich9
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sw600sw60114-apr-20086050a2174701+10 | |
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Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
Original |
cghv1f025s | |
ITE 8502
Abstract: MH1210 IT8502 hy5rs123235b ite8502 GMT780-1 OZ8118LN ISL6251 BCM5784 G682L09TT12U
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Original |
318mhzics9lpr395cd0044abr5c833+16 |