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onsemi FDMS86540 (POWERTRENCH)Mosfet, N-Ch, 60V, 129A, Power 56; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:129A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V Rohs Compliant: Yes |Onsemi FDMS86540 |
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FDMS86540 (POWERTRENCH) | Cut Tape | 5,391 | 1 |
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onsemi FDD86540 (POWERTRENCH)Mosfet, N-Ch, 60V, 136A, 127W, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:136A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes |Onsemi FDD86540 |
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FDD86540 (POWERTRENCH) | Cut Tape | 4,290 | 1 |
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onsemi FDMC86340 (POWERTRENCH)Mosfet, N-Ch, 48A, 80V, Pqfn; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.005Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Rohs Compliant: Yes |Onsemi FDMC86340 |
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FDMC86340 (POWERTRENCH) | Cut Tape | 3,705 | 1 |
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Superior Electric 21-40 (POWERSTAT SERIES)Transformer, Variable, 120V, 5A; Transformer Type:Manually Operated; Construction Type:Open; No. Of Phases:Single Phase; Frequency Range:50Hz/60Hz; Input Voltage:120V; Output Voltage:140V; Output Current:-; Knob Rotation:Ccw, Cw Rohs Compliant: Yes |Superior Electric 21-40 |
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21-40 (POWERSTAT SERIES) | Bulk | 1 |
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Superior Electric 10C-40 (POWERSTAT SERIES)Variable Transformer; Transformer Type:Motor Driven; Construction Type:Open; No. Of Phases:Single Phase; Frequency Range:50Hz/60Hz; Input Voltage:40V; Output Voltage:40V; Output Current:-; Constant Current Load:7A Rohs Compliant: Yes |Superior Electric 10C-40 |
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10C-40 (POWERSTAT SERIES) | Bulk | 1 |
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40POWER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TI_BQ24721C_QFN_32P
Abstract: tps51620 INVENTEC 4250T PCMB0603T PCI7412 BQ24721C bq24721 ddr3_sodimm0 ich9
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SW600 SW601 14-Apr-2008 6050A2174701 TI_BQ24721C_QFN_32P tps51620 INVENTEC 4250T PCMB0603T PCI7412 BQ24721C bq24721 ddr3_sodimm0 ich9 | |
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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CGHV1F025S CGHV1F025S | |
ITE 8502
Abstract: MH1210 IT8502 hy5rs123235b ite8502 GMT780-1 OZ8118LN ISL6251 BCM5784 G682L09TT12U
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318MHz ICS9LPR395 CD0044AB R5C833 5784M) IEEE1394 GPIO19 EC43--PAGE EC44--PAGE EC45--PAGE ITE 8502 MH1210 IT8502 hy5rs123235b ite8502 GMT780-1 OZ8118LN ISL6251 BCM5784 G682L09TT12U |