CGHV1F025S Search Results

CGHV1F025S Datasheets (2)

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Cree/Wolfspeed

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV1F025S		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 12DFN	Original	PDF	2.55MB
CGHV1F025S-AMP1		Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - DEMO HEMT TRANS AMP1 CGHV1F025S	Original	PDF	2.55MB

CGHV1F025S Price and Stock

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MACOM


MACOM CGHV1F025S GaN FETs GaN HEMT DC-15GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV1F025S					1 $145.32 10 $122.17 100 $119.87 1000 $119.87 10000 $119.87	Get Quote
Richardson RFPD	CGHV1F025S		165		250	1 - 10 - 100 $92.23 1000 $92.23 10000 $92.23	Buy Now
MACOM CGHV1F025S-AMP3 M/A-COM Technology Solutions AMPLIFIER ASSY, INCLUDES CGHV1F025S, 5.5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV1F025S-AMP3					1 - 10 $2106.43 100 $2106.43 1000 $2106.43 10000 $2106.43	Get Quote
MACOM CGHV1F025S-AMP4 M/A-COM Technology Solutions 2xCGHV1F025S 4.4 # 5.0 GHz Balanced Ampl
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV1F025S-AMP4					1 - 10 $2106.43 100 $2106.43 1000 $2106.43 10000 $2106.43	Get Quote
Richardson RFPD	CGHV1F025S-AMP4				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV1F025S-AMP1 RF Development Tools Test Board with GaN HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV1F025S-AMP1					1 - 10 $1219.43 100 $1219.43 1000 $1219.43 10000 $1219.43	Get Quote
Richardson RFPD	CGHV1F025S-AMP1				1	1 - 10 - 100 $1090.80 1000 $1090.80 10000 $1090.80	Buy Now

CGHV1F025S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and	Original	cghv1f025s	PDF
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and	Original	cghv1f025s	PDF