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    CGHV1F025S Search Results

    CGHV1F025S Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGHV1F025S
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 12DFN Original PDF 2.55MB
    CGHV1F025S-AMP1
    Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - DEMO HEMT TRANS AMP1 CGHV1F025S Original PDF 2.55MB
    SF Impression Pixel

    CGHV1F025S Price and Stock

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    MACOM CGHV1F025S

    RF MOSFET HEMT 40V 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () CGHV1F025S Cut Tape 246 1
    • 1 $138.10
    • 10 $116.67
    • 100 $111.31
    • 1000 $111.31
    • 10000 $111.31
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    CGHV1F025S Digi-Reel 246 1
    • 1 $138.10
    • 10 $116.67
    • 100 $111.31
    • 1000 $111.31
    • 10000 $111.31
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    CGHV1F025S Reel 168 250
    • 1 -
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    • 1000 $102.63
    • 10000 $102.63
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    Mouser Electronics CGHV1F025S 500
    • 1 $138.09
    • 10 $111.32
    • 100 $102.64
    • 1000 $102.64
    • 10000 $102.64
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    Verical CGHV1F025S 132 1
    • 1 $180.65
    • 10 $180.65
    • 100 $180.65
    • 1000 $180.65
    • 10000 $180.65
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    Richardson RFPD CGHV1F025S 132 1
    • 1 $180.62
    • 10 $180.62
    • 100 $180.62
    • 1000 $180.62
    • 10000 $180.62
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    MACOM CGHV1F025S-AMP1

    DEMO HEMT TRANS AMP1 CGHV1F025S
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    DigiKey CGHV1F025S-AMP1 Bulk
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    Mouser Electronics CGHV1F025S-AMP1
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    Richardson RFPD CGHV1F025S-AMP1 1
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    MACOM CGHV1F025S-AMP4

    RF FRONT END REFERENCE DESIGNS
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    Richardson RFPD CGHV1F025S-AMP4 1
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    Wolfspeed CGHV1F025S

    Transistors
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    Vyrian CGHV1F025S 19
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    CGHV1F025S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original
    CGHV1F025S CGHV1F025S PDF

    Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original
    CGHV1F025S CGHV1F025S PDF