IXGR40N60C2D1
Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C
|
Original
|
isoplus247tm40n60c240n60c2d1247tm+8ic110id110ixgr40n60c2d1ixgr 40n60c2d140n60cixgr40n60c240n60074k
|
PDF
|
40n60c2
Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
|
Original
|
40n60c2o-268ic110o-247 |
PDF
|
|
Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
|
Original
|
40n60c2o-268ic110o-247 |
PDF
|
40n60c2d1
Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
40n60c2d1o-247ic110ixgh40n60c2d1+4transistor kf 50840n60diode fr 30740n60c2d
|
PDF
|
IXGR40N60C2D1
Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1
Contextual Info: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions
|
Original
|
40n60c240n60c2d1isoplus247tm247tm+5728b1123b1065b1ixgr40n60c2d1ixgr 40n60c2d1
|
PDF
|
|
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface Preliminary Data Sheet IXGR_C2 IXGR_C2D1 VCES IC25 = = VCE(SAT) = tfi(typ = ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C
|
Original
|
isoplus247tm40n60c240n60c2d1247tm+2ic110id110
|
PDF
|
IXGR40N60C2D1
Abstract: 037 G V 40N60c2d1 DS99052B
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
isoplus247tm40n60c240n60c2d1247tm+7ic110id110728b1123b1ixgr40n60c2d1037 g vds99052b
|
PDF
|
40N60C2D1
Abstract: KF 520
Contextual Info: HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT = tfi(typ = IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 C2-Class High Speed IGBTs 600 V 56 A 2.7 V 32 ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
40n60c2d1o-247ic110o-268+2leade00kf 520
|
PDF
|
IXGR40N60C2D1
Abstract: IXGH40N60C2 40n60c2d1 ixgr 40N60c2d1 siemens servo motor 40N60C2 IXGH40N60C2D1 40n60
Contextual Info: IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C
|
Original
|
40n60c240n60c2d1isoplus247tm247tm+10ic110id110728b1123b1ixgr40n60c2d1ixgh40n60c2ixgr 40n60c2d1siemens servo motorixgh40n60c2d140n60
|
PDF
|
40n60c2d1
Abstract: IXGR40N60C2D1
Contextual Info: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C
|
Original
|
isoplus247tm40n60c240n60c2d1247tm+4728b1123b1065b1ixgr40n60c2d1
|
PDF
|
40n60
Abstract: 40N60C2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads
|
Original
|
40n60c2ic110o-268o-247+4728b1123b1065b140n60
|
PDF
|
7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
|
Original
|
7n60b-2x7n60c-2x16n60b2-3x16n60c2-3x+1230n60b2-4x30n60c2-4x40n60b2-5y40n60c2-5y60n60b2-7y60n60c2-7y7n60b equivalent10n60bixgd28n1220n12016n60c2
|
PDF
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
|
PDF
|
