40N60B2 Search Results

40n60

Abstract: 40N60B2D1 40N60B2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet

Contextual Info: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

40N60B2D1

Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXGR40N60B2D1

Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet

40N60B2

Abstract: IXGH40N60B2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

ixgr40n60b2d1

Abstract: IXGR40N60B2 IXGR40N60
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet

ixgr40n60b2d1

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet

ixgh40n60b2d1

Abstract: 40N60B2D1 40n60b QG SMD TRANS
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

7N60B equivalent

Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches