4093 BF Search Results

MMBF4091

Contextual Info: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample

Contextual Info: SH67L17 24K 4-bit Micro-controller with LCD Driver Features SH6610D-based single-chip 4-bit micro-controller with LCD driver ROM: 24K X 16bits RAM: 4136 X 4 bits - 43 System Control Register - 4093 Data memory - 180 LCD RAM Operation Voltage: 1.2V - 1.7V Typical 1.5V

hcf40938

Abstract: cmos 4093 HF 4093 N 4093BE cmos 4093 PIN DIAGRAM HCF 4093 N 4093 BF CC 4093 N 4093 be 4093 N
Contextual Info: C O S / M O S I v ° £ ‘i 'n 7 INTEGRATED s G CIRCUIT 7929225 4 1 T -v s -* -/ S' TH0I1S<>N D 7C » H.-5 k * h c c /h c f , «m b 1 - . llC 08920 S G S SEMICONDUCTOR CORP i i QUAD 2-INPUT NAND SCHMITT TRIGGERS • • • • • • • • • • SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS

schmitt trigger 4093

Abstract: ic hc 4093
Contextual Info: COS/MOS INTEGRATED CIRCUIT / ^ ¿TS, & kcc/hcf 4093B Q U A D 2 -IN P U T N A N D S C H M IT T T R IG G E R S • • • • • • • • • • SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS HYSTERESIS VOLTAGE TYPIC ALLY 0.9V AT V DD= 5V AND 2.3V AT V DD= 10V

HF 4093 N

Abstract: bf 4393 4392 2N4119
Contextual Info: N CHANNEL FIELD EFFECT TRANSISTORS - METAL CASE Typ«« 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 A p p lic a tio n AF/R F general purpose Usage g é n é ra i BF/H F 2N 4117 2 N 4 1 17 A 2 N 4118 V BR GSS m in •g s s m ax IV ) ip A r (n A ) -5 0 -5 0 -5 0

4093 BP

Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
Contextual Info: i iriilk if^ B c lG l-c te n a n il-i Übersicht CMOS-Schaltkreise CMOS-IC’s Übersicht CMOS-Schaltkreise - CMOS-IC’s V4001 D V 4007 D V4011 D V 4012 D V 4013 D V4015D V4017D V4019D V 4023 D V 4027 D V 4028 D V 4029 D V 4030 D V 4034 D V 4035 D V 4042

sd 4093

Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
Contextual Info: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A

IC 4093 pin configuration

Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Contextual Info: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58

Contextual Info: %+ * !#0&-(0+''#!) -2'&-()&#,2&2+" $#!'"0#-81-960BA7AA0'): -):;8-9 B 680'683,=1,-0 7-8):165070=1:00;3:8) =1,-0157;:08)5/-0.8640BAA0:60FFA&6 .680915/3-0)5,0D070)9-05-:=6829 B C")130680')3306;5:15/0367:165)34 9 

bf 649

Abstract: BC 247 bo 139 BF139 bf 867 BO30 Bc 649 ESM4091 bc 877 ESM4092
Contextual Info: N channel field effect transistors plastic case Transistors à effet de champ, canal N (boîtier plastique) Case V ( B R )G S S (V) Type Boîtier min * 2 U 38 19 T O 92o -2 5 2 N I5425 F 139 Bo — 3(3 2 N $ 4 26 F 13 9 0o -30 *G SS (nA) ( p A )# <D SS (m A)

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

3055t

Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Contextual Info: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50

synergy microwave vco

Abstract: adf4150hv ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31
Contextual Info: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: 6 V to 30 V RF bandwidth to 4.4 GHz Programmable divide-by-1/2/4/8 or 16 outputs

ADu7020

Abstract: 1.5GHZ VCO ADF41xx mtld VCO 1ghz from synergy part no DCYS100-200-12
Contextual Info: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: Vp = 6 V to 30 V Tuning Range 1.0V to 29V or +/- 1V from Vp supply rails

Contextual Info: Fractional-N/Integer-N PLL Synthesizer ADF4151 Data Sheet FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer RF bandwidth to 3.5 GHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Separate charge pump supply VP allows extended tuning

adf4351

Abstract: TRANSISTOR SDM M6
Contextual Info: Wideband Synthesizer with Integrated VCO Preliminary Technical Data ADF4351 FEATURES GENERAL DESCRIPTION Output frequency range: 35 MHz to 4400 MHz Fractional-N synthesizer and integer-N synthesizer Low phase noise VCO Programmable divide-by-1/-2/-4/-8/-16/-32/-64 output

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Halbleiterbauelemente DDR

Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
Contextual Info: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

philips tea 1091

Abstract: incremental encoder c58 1980 Audio Handbook CD 4093 DATASHEET ic top 246 yn Philips 3139 147 sda 3202 prescaler TEA 1091 XD smd fuse SAA7140
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA7108E; SAA7109E PC-CODEC Product specification File under Integrated Circuits, IC22 2001 Dec 12 Philips Semiconductors Product specification PC-CODEC SAA7108E; SAA7109E 10.3 10.4 10.5 10.6 CONTENTS Clock and real-time synchronization signals

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

SMD A7H

Abstract: smd marking ACH LP8556-E01 TMD20EQA cfge LP8556TMX-E06 AN-1112 hybrid pwm LP8556 LP8556-E05
Contextual Info: LP8556 High-Efficiency LED Backlight Driver for Tablets General Description Features LP8556 is a white LED driver featuring an asynchronous boost converter and six high precision current sinks that can be controlled by a PWM signal or an I2C master. The boost converter uses adaptive output voltage control for

SMD A7H

Contextual Info: LP8556 High-Efficiency LED Backlight Driver for Tablets General Description Features LP8556 is a white LED driver featuring an asynchronous boost converter and six high precision current sinks that can be controlled by a PWM signal or an I2C master. The boost converter uses adaptive output voltage control for