40150 Search Results

"Ultrasonic Sensor"

Abstract: ultrasonic sensor 40khz sensor ultrasonic sensor 40khz ULTRASONIC parking system car sensor parking Ultrasonic Piezoelectric ultrasonic car parking sensor sonar sensors 40KHZ ULTRASONIC piezoelectric pressure sensor
Contextual Info: MITSUMI Ultrasonic Sensor SUD-40165CB00•SUD-40150CB00 OUTLINE The piezoelectrical effect of piezoelectric ceramic is used in this ultrasonic sensor for detecting the 40kHz- wavelength of acoustic energy. FEATURES 1. Small size, light weight. 2. Size can be between 15-20mm in diameter.

Contextual Info: 3TH41 _SILICON DIFFUSED TYPE RECTIFIER MOST SUITABLE FOR COLOR T.V. DAMPER. Unit in mm Repetitive Peak Reverse Voltage : V r r m = 1500V ÌSL Average Output Rectified Current: Io= 3A : trr=l»5jis 26MIN Reverse-Recovery Time o X • HAXIMUM RATINGS

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS

1r5nu41

Contextual Info: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

Contextual Info: SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK TELCOMMUNICATION APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r h =400V . Average Forward Current : Io=0.5A Ta=47°C . Dual in Line Type. . Plastic Mold Package. . Low Loss Type. POLARITY + o H o o

Contextual Info: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS

Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current

M16JZ51

Abstract: m16gz51 SM16J M16G
Contextual Info: £ Ê S M 1 6 G Z 5 1 SILICON PLANAR TYPE g R / fl 6 J Z 5 1 AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage v DRIi“ 4 0 0 , 600V . R.M.S On-State Current lT RMS -16A . High Commutating (dv/dt)c

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1R5DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage VRRM=200V Average Forward Current F (AV) =1.5A (Ta=25°C) 35ns (Max.) Very Fast Reverse-Recovery Time v^o .g sv

5fl2cz

Abstract: 5DL2CZ
Contextual Info: SILICON EPITAXIAL TYPE p ß L2CZ47A HIGHefficiency PIQDEstack hed) SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERITE & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage 0 3 .2± o.2 10.3 M AX : V^jyvj=200, 300, 400V • Average Output Rectified Current : Iq =5A

Contextual Info: 3JH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. U n i t in m m . R e p e t i t i v e P e a k R e v e r s e V o l t a g e : V rrh =600¥ . Average Forward Current : If AV =3.0A . V e r y F a s t R e v e r s e - R e c o v e r y T i m e : tr r = 2 0 0 n s ( M a x . )

Contextual Info: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

016Z

Abstract: 020Z 025Z
Contextual Info: 195D www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Coated FEATURES • 8 mm, 12 mm tape packaging to EIA-481 reeling per IEC 60286-3. 7" 178 mm standard 13" (330 mm) available • US and European case sizes available

110L2G43

Abstract: 110U2G43 110Q2G43 30-BRIDGE
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE 110 G,L,Q,U 2G43 SINGLE & THREE PHASE FULL WAVE BRIDGE APPLICATIONS. Unit in mm FEATURES: 3 - C M 5 X 10 ) %-<t 6,3±CL2 . Repetitive Peak Reverse Voltage : V r r m =^00~1600V 7 92.3± Q S 6. 3 . Average Output Rectified Current : Io=110A(l$)

Contextual Info: SILICON DIFFUSED TYPE SUPER FAST RECOVERY RECTIFIER U05NU44 SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetivier Peak Reverse Voltage : Vrrji=1000V . Average Forward Current p : If a V =0.5A . Very Fast Reverse-Recovery Time : trr=100ns(Max.)

Contextual Info: 591D www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Low ESR, Conformal Coated, Maximum CV FEATURES • New robust ratings for pulsed applications • New case size offerings • 1.2 mm to 2 mm height • Terminations: 100 % matte tin 2 standard,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sivb*60

Abstract: sivb60 sivb sivb40 SIV-b60 SHINDENGEN DIODE
Contextual Info: SHINDENGEN ELECTRIC MFG 54E D • 021^307 0000455 354 « S H E J ■ O U T L IN E D IM E N S IO N S S1VBD 15.6 ±03 : D 600V 1A 9 7 * ( M + © © © (D © U n it • mm ■ R A T IN G S Absolute Maximum Ratings m @ Item S to ra g e T e m p e ra tu re

BA60

Abstract: rectifier s1wb Bridge diodes
Contextual Info: Rectifier Diodes Low Noise Bridge Diodes Electrical Characteristics Absolute Maximum Ratings rm lo Conditions [V] [A] [°C] V Part No. If s m Tstg Tj [A] [°C] [°C] Ir tre eil eja ejc Conditions max (max) (max) (max) (max) If V r=Vrm [A] [mA] Vf (max) To

S5VB10

Abstract: s5vb40 SHINDENGEN DIODE
Contextual Info: SHINDENGEN ELECTRIC MFG 54E D • fl2 n 3 6 7 ■ GDDGSIS bST « S H E J O U T L IN E D IM E N S IO N S S5VBD 600V 6A ■ R A T IN G S A b s o lu te Maximum R a tin g s m s Item i£ # S J f Storage Temperature SteSM B« Operating Junction Temperature Maximum Reverse Voltage

TT 46 N 800

Abstract: 1a43
Contextual Info: -J 'J v W 'C ï S - v Bridge Diode Surface Mounting Device • fl-Ä N -ä s H O U T L IN E D IM E N S IO N S Package : 1W 7.6 S 1 W B A D /D B 800V 1A 43 f i • /J \iU S M D A ° y { 7 - - y • H I fsm 2.0 ¡N Ep E& 0.8MIN V \r 2.5 UMAX .2 ,5 . (« fiL tC D S r ö E O U C tt, l£ E P tt« £ C !B B <