400V 100MA NPN Search Results

TS13002 TRANSISTOR

Abstract: 400V 100MA NPN TS13002 TS13002CT
Contextual Info: TS13002 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.2A Pin assignment: 1. Emitter 2. Collector 3. Base Features VCE SAT , = 0.5V @ Ic / Ib = 100mA / 10mA Ordering Information High voltage. Part No. High speed switching Structure Silicon triple diffused type.

smd 0.5 400v

Abstract: 2SC4505
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4505 Features High breakdown voltage. BVCEO = 400V Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25

BUY69

Abstract: BUY69A NPN Transistor VCEO 1000V
Contextual Info: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).

BUY69A

Abstract: BUY69 NPN Transistor VCEO 1000V
Contextual Info: 1165903 High voltage power switch. designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-emitter sustaining voltage - 100mA. • VCEO sus = 400V (minimum). • Optimum drive condition curves.

NPN Transistor 1A 400V to - 92

Abstract: TSC873 TRANSISTOR 0835 transistor 600v. 1a. to 92 NPN Transistor 600V TSC873CT TSC873CW npn 600v to92 B12 IC marking code NPN TO92 400V
Contextual Info: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 1A VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ● 0.5V @ IC / IB = 500mA / 100mA

Contextual Info: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

TS13002 TRANSISTOR

Abstract: 122 transistor To-92 NPN transistor to-92 high gain NPN Transistor 1A 400V TS13002 TS13002CT 400V 100MA NPN
Contextual Info: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

marking b07

Abstract: NPN transistor to-92 TS13002 TS13002CT TS13002 TRANSISTOR 122 transistor To-92 "NPN Transistor"
Contextual Info: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

300V transistor npn 2a

Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
Contextual Info: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.

Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE2531

Abstract: pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530
Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

pnp 400v 4a

Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Dow Corning DC 11

Abstract: NTE2638 npn darlington 400v 1.*a
Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

NTE2638

Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

ksp44

Contextual Info: NPN EXITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAGE TRANSISTOR TO-92 • Coll*ctor€m ilt*r Voltage VCEo = KSP44: 400V KSP45: 350V • Collector Dissipation: Pc max = 625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Symbol Collector-Base Voltage

BU931R

Abstract: BU932R darlington 8A 300V TC125
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION •With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING See Fig.2 PIN DESCRIPTION

Contextual Info: TS13002A High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.3A VCE SAT , = 1.5V @ Ic / Ib = 200mA / 20mA Pin assignment: 1. Emitter 2. Collector 3. Base Features  Ordering Information High voltage.  High speed switching Structure   Silicon triple diffused type.

Contextual Info: TS13002A High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.3A VCE SAT , = 1.5V @ Ic / Ib = 200mA / 20mA Pin assignment: 1. Emitter 2. Collector 3. Base Features  Ordering Information High voltage.  High speed switching Structure   Silicon triple diffused type.

NPN Transistor 50A 400V

Abstract: 400v 50A Transistor BU807 400V 100MA NPN
Contextual Info: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER

npn switching transistor Ic 100mA

Abstract: TS13002ACT TRANSISTOR TS13002A TS13002ACT
Contextual Info: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

Contextual Info: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

AC2500

Abstract: KPC2020 KPC2021 KPC2022 KPC2023
Contextual Info: Photocoupler KPC2020 • KPC2021 • KPC2022 • KPC2023 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting DIMENSION Unit : mm Diode and a Silicon NPNPN Phototriac in a 6-pin package. 7.62 5 6.4 FEATURES • Peak Off-state Voltage : Min.400V