400S1 Search Results

DM7413N

Abstract: DM54 DM74 DM7413
Contextual Info: DM5413/DM7413 HQ National Sim Semiconductor DM5413/DM7413 Dual 4-Input NAND Gates with Schmitt Trigger Inputs General Description Absolute Maximum Ratings Note d This device con tains tw o independent gates each of w hich perform s the logic NAND fun ction. Each input

IGBT FZ 800

Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
Contextual Info: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15

el2020cn

Abstract: 3131S BV-1 501 EL2020J/883B pot 100K smd EL2020CJ EL2020CM EL2020J EL2020L LCC capacitors BF
Contextual Info: elan D 312^557 0002045 1ST « E L A EL2020/EL2020C 50 MHz Cm HIGH PERFORMANCE ANALOG INT ELANTEC 7^-0 1 - t o INC F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • • • • • The EL2020 is a fast settling, wide bandwidth amplifier opti­

Contextual Info: EL2020C F eatu res G eneral D escrip tion • • • • • • • • • The EL2020 is a fast settling, wide bandwidth amplifier opti­ mized for gains between —10 and +10. B uilt using the Elantec monolithic Complementary Bipolar process, this amplifier uses

Contextual Info: HA-5020/883 Semiconductor 100MHz Current Feedback Video Amplifier with Disable January 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-5020/883 is a wide bandwidth, high slew rate

AEL2020

Abstract: EL2020CN operational amplifier discrete schematic EL2020 RS-170 impedance match EL2020CPL EL2020J 7F10
Contextual Info: EL20201EL2020C ELANTEC INC eteree HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2020/EL2020C 50 MHz Current Feedback Amplifier F ea tu re s G eneral D escrip tio n • • • • • • The EL2020 is a fast settling, w ide b an d w id th am p lifier optim ized

DM7413N

Contextual Info: co 5 p^. K&M National s Q co 5 in 2 o Sim Semiconductor DM5413/DM7413 Dual 4-Input NAND Gates with Schmitt Trigger Inputs General Description Absolute Maximum Ratings Note d This device con tains tw o independent gates each of w hich perform s the logic NAND fun ction. Each input

400S-120

Contextual Info: 1-Pack IGBT 1200V 1x400A 1MBI 400S-120 n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

nzm4 -XR

Abstract: NZM10 NZMN3-AE400 nzm3 -XR NZMN3-AE630 moeller VDE 0660 nzm1 60947-3 NZMN4-AE630 moeller circuit breaker nzm3 NZMH3-AE400 moeller IZM 324 - 2000
Contextual Info: Product Range Catalogue | 2006 Switching, protection, communication – the new NZM1-4 circuit-breaker series up to 1600 A Reliable and safely controlling, switching and managing power. In industry, in buildings and in machine construction. Innovative protection concepts.

ADC10662

Abstract: ADC10662CIJ ADC10662CIN ADC10662CIWM ADC10662CMJ ADC10664 ADC10664CIJ J24A M24B N24A
Contextual Info: v 9 igqi National äLJä.Semiconductor June 1991 ADC10662/ADC 10664 10-Bit 360 ns A /D Converter with Input Multiplexer and Sample/Hold General Description Features Using an innovative, patented m ultistep* conversion te c h ­ nique, the 10-bit AD C 10662 and AD C 10664 are 2- and

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

FZ1600R12KF4

Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Contextual Info: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC

400S120

Abstract: IGBT 1200v VCE-12
Contextual Info: 1-Pack IGBT 1200V 1x400A 1MBI 400S-120 • Outline Drawing IGBT MODULE S-Series ■ Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

SN7441

Abstract: 54175 TFK 404 MM1402a equivalent SD300 N74141 SN7401 3 BB 4 SO 5 CON 6 RAY 7 CC 8 SI 9 RB 10 RG 11 VE
Contextual Info: NUMERICAL INDEX FUNCTIONAL INDEX SALES OFFICES Copyright 1974 S IG N E T IC S C O R P O R A T IO N Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product.

IGBT FZ 800

Abstract: 12KL4C 12KF4 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6
Contextual Info: IGBT High Power Modules Type V ces Ic A V IGBT-Hochleistungsmodule V cE sat V E o n / E o ff R th J C Tvj=25°c mWs °c/w ty p . T „ j= 1 2 5 ° C per ty p . a rm o u t lin e Type V cE S Ic A V * VcEsat V E o n / E o ff R fh J C T„j=25°C mWs °c/w ty p .