400RNA Search Results

lo520

Abstract: B5400 VLA303-01 LO-530 FO41 PO108 IO530 lo630 lo540
Contextual Info: HYBRID 1C VLA303-01 IPM POWER SUPPLY UNIT DESCRIPTION The VLA303-01 is an isolated DC-DC converter OUTLINE DRAWING designed to drive the IPM. 6 outputs can obtain from an Dimensions: mm Lot No input of 140 to 380VDC. The terminals between input and outputs, and each outputs are isolated.

CZT3055

Abstract: GE SOT-223 MARKING
Contextual Info: Central" CZT2955 PNP CZT3055 NPN Semiconductor Corp. 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors man­ ufactured by the epitaxial base process,

Contextual Info: TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3B7S SILICON PLANAR NPN POWER TRANSISTOR Absolute Maximum Ratings TOM Collector-Base Voltage Collector-Emitter Voltage 120V 90V Emitter-Base Voltage

acrian RF POWER TRANSISTOR

Abstract: ACRIAN acrian RF POWER TRANSISTOR 300 w T-33-O acrian inc
Contextual Info: n 18299 8 A C R I A N 97D 0 1229 INC T7 ACRIAN INC D T~— 33- O DE | 0 1 0 2 ^ 0 DGDiaai 3 46110 GENERAL DESCRIPTION 10 WATTS - 28 VOLTS _ 1000 MHz The 46110 is a stable common emitter transistor capable of providing 10 watts of CW RF output power across the 500-1000 MHz frequency

Contextual Info: P * FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3202 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES * Excellent Hfe Linearity :Hfe 2 =25(Min) at Vce=6V, Ic=400mA. ♦Complementary toKTA1270

lm 293 iz 5

Abstract: 2937ES-5 2937ES-10 A04A ic L73B
Contextual Info: & Semiconductor LM2937 500 mA Low Dropout Regulator General Description The LM 2937 is a positive voltage regulator capable of sup­ plying up to 500 m A o f load current. The use of a PNP power tra n sisto r provides a low dropout voltage characteristic. With