400II Search Results

3L50P

Abstract: NS-105
Contextual Info: SPEED/PACKAG E AVAILABILITY 54 F,W 54LS F,W 54S F,W PIN CONFIGURATION 74 A,F 74LS A,F 74S A,F A,F,W PACKAGE SWITCHING CH ARACTERISTICS vCC = 5V, t a TEST CONDITIONS PARAMETER - 25°c 54/74 54/74LS 54/74S CL=15pF RL -400ii Ct=15pF C L =15pF RL =280 2 R L =2kS2

P8251A

Abstract: P82C51A tmp8251 82C51A P8251
Contextual Info: T O S H IB A TM P82C51A TMP82C51AP-2 /TMP82C51AP-10 TMP82C51 AM-2/TMP82C51 AM-10 PROGRAM M ABLE COMMUNICATION INTERFACE 1. GENERAL DESCRIPTION T he TM P82C51A is th e in d u stry sta n d a rd U n iv ersa l S ynchron o u s/A sy n ch ro n o u s R eceiver/T ransm itter USART th a t is fabricated u sin g C-MOS silicon g a te technology.

MPU85-347

Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10

7450 pin configuration

Abstract: 54LS 74LS pin configuration 74H52 74H55 11F12 F1220
Contextual Info: SPEED/PACKAGE AVAILABILITY PIN CONFIGURATION 54.74H A,F P A C K A G E SWITCHING CHARACTERISTICS V CC T E S T C O N D IT IO N S 54/74LS C L =25pF RL =280S2 E X P A N D E R P IN S A R E OPEN C|_=15pF R|_=2kS2 M IN TYP MAX 7 M IN T YP MAX UNIT 11 12 20 ns 11

1NA117P

Abstract: MA117A
Contextual Info: For Immiiliali M ia u te , Contact Your LotiI Salesperson INA117 B U R R -B R O W N AVAILABLE IN DIE 1»; High Common-Mode Voltage DIFFERENCE AMPLIFIER FEATURES APPLICATIONS • COMMON-MODE INPUT RANGE: ±200V V ,= ±15V • PROTECTED INPUTS: +500V Common-Mode

Contextual Info: > k i y j x i > k i 3V4 D ig it D M M C irc u it _ Features The MAX133 and MAX134 are integrating A/D con­ verters for 3% digit multimeters and data acquisition systems such as data loggers and weigh scales. The A/D’s internal resolution is ±40,000 counts. An extra

Contextual Info: / T u n m _ - TECHNOLOGY i 100MHz Current Feedback Amplifier with DC Gain Control F€flTUR€S DCSCRIPTIOn • Very Fast Transconductance Amplifier Bandwidth: 75MHz The LT1228 makes it easy to electronically control the gain

Contextual Info: HN27C301P/FP Series— 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C301P/FP Series are in the "1 " state output high .

82C79

Abstract: TMP82C79 SSOP40 fifo ram 8bit TMP82C79P-2 line scan sensor SSOP40 package 16X4 MPU85-272 D-B73C
Contextual Info: T O S H IB A TMP82C79 P R O G R A M M A B LE KEYBO ARD /D ISPLAY INTERFACE TMP82C79P-2/TMP82C79M-2 1. G EN ER A L DESCRIPTION The TM P82C79P-2/M-2 hereinafter referred to as TM P82C79 is a programmable keyboard/display interface. The keyboard portion can provide a scanned interface up to

Contextual Info: U A RfìO'i HARRIS æ S E M I C O N D U C T O R Ê U Dual 125 MHz Video Current Feedback Amplifier juiy 1994 Features • M M Description Wide Unity Gain B andw id th. 125MHz • Slew R a te . 475V/ns

Contextual Info: 33 HftR ? : 3 0 HA-5020/883 10OMHz Current Feedback Video Amplifier March1993 Features Description • This Circuit is Processed in Accordance to Mii-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5020/883 is a wide bandwidth, high slew rate

pin diagram of IC 74121

Abstract: ic 74121 pins diagram application notes 74121 monostable multivibrator using 74121 ic 74121 54121 National Semiconductor and Nano Pulse
Contextual Info: June 1989 Semiconductor 54121/D M 54121/D M 74121 One-Shot with Clear and Complementary Outputs General Description The DM54/74121 is a monostable multivibrator featuring both positive and negative edge triggering with complemen­ tary outputs. An internal 2kft timing resistor is provided for

Contextual Info: SSI 32R2024R mmMkms’ 5V, 4-Channel Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2024R is a bipolar monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

2N5770

Contextual Info: t U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5770 TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to X mA range.

TMP82C79P-2

Abstract: 82c79 TMP82C79 fifo ram 8bit ssop40 16X4 TMP82C79M-2 toshiba signal multiplexing D-B73C
Contextual Info: T O S H IB A TMP82C79 P R O G R A M M A B LE KEYBO ARD /D ISPLAY INTERFACE TMP82C79P-2/TMP82C79M-2 1. G EN ER A L DESCRIPTION The TM P82C79P-2/M-2 hereinafter referred to as TM P82C79 is a programmable keyboard/display interface. The keyboard portion can provide a scanned interface up to

el2020cn

Abstract: 3131S BV-1 501 EL2020J/883B pot 100K smd EL2020CJ EL2020CM EL2020J EL2020L LCC capacitors BF
Contextual Info: elan D 312^557 0002045 1ST « E L A EL2020/EL2020C 50 MHz Cm HIGH PERFORMANCE ANALOG INT ELANTEC 7^-0 1 - t o INC F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • • • • • The EL2020 is a fast settling, wide bandwidth amplifier opti­

090Q

Abstract: LTC DWG 05-08-1661 "RF Power Amplifier" rf power detector circuit diagram rf power amplifier 850 MHZ RF Power detector LTC1757-1CMS8 LTC1757-2CMS MS10 150K resistor
Contextual Info: I F I R i l R i L I A i l Electrical Specifications Subject to Change u f m _LTC 1757-1/LTC 1757-2 TECHNOLOGY D iS C R IP TIO n K fìT U lK S Dual Band R F Power Am plifier Control LT C 175 7-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850M Hz to 2 G H z

SWA115

Contextual Info: : G S-THOMSON 07E D I 7 ^ 2 3 7 - 81C 1 9 1 8 5 □□13014 b I /-¿Y'// : - • ■ .' ' ■ “ L B 1017 P R E LIM IN A R Y D A TA AN AT&T PRODUCT HIGH-SPEED DUAL ANALOG SWITCH • LOW “ ON” RESISTANCE 9 TO 15 OHMS FOR SIGNAL UP TO ±4V AND 100kHz

single phase inverters circuit diagram

Abstract: 3 phase inverters circuit diagram circuit diagram for single phase inverters three phase inverters circuit diagram pin configuration BFW 11 S54LS138
Contextual Info: SPEED/PACKAGE AVAILABILITY FUNCTION TABLE INPUTS PIN CONFIGURATION OUTPUT A B Y L L H H L H L H L H H L H - high level, L - tow level SWITCHING CHARACTERISTICS v QC - 5V, t a = 2 5 °c LIMITS FROM PA R A M E T E R * INPUT l PLH A or B T E S T CONDITIONS

4256b

Abstract: TMM27256B bf 255
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM24256BP/BF-17, -20 ¡d e s c r i p t i o n ! The TMM24256BP/BF is a 32,768 w o r d s x 8 bits one time programmable read only memory, and molded in a 28 pin plastic package. The TMM242 56 BP /B F's access time is 170ns/200ns, and has low power standby mode which

cn/A/U 237 BG

Abstract: rtd 2660
Contextual Info: /= T S G S -T H O M S O N L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIMINARY DATA MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PRO­ GRAMMABLE TRANSITION TIME 3 to 100ms

IC 7805

Abstract: E50292 E50292 tape 24AWGX2C E81174 ic 7805 current 300ma UL E50292 P2XXF IC 7805 pin diagram 7805 IC specification
Contextual Info: CUI INC Part No: DPR050030-P6P-SZ Description: A C /D C A dapter Date: 8 / 1 8 /0 4 Unit: mm Page No: 1 of 13 CONTENT DESCRIPTION NO. Product characteristics 1 1 ,1 General description 1 .2 Electrical characteristics 1 .3 Mechanical characteristics 1 .4 Adaptor colour

IN1002

Abstract: T120F
Contextual Info: T 120 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values - Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = -4o”C.t, max vDRM, vRRM Vorwärts-Stoßspitzensperrspannung

T120F

Contextual Info: T 120 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values - Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = -4o”C.t, max vDRM, vRRM Vorwärts-Stoßspitzensperrspannung