4004 DIODE Search Results

Contextual Info: RECTIFIER DIODES, Standard Recovery, Plastic Package ISI P a rt N um ber M axim um R ectified Current at T. Peak in ve rse Voltage I A m ps i f i l i Ptv (Veits) Average 1194001 50 1N 4002 100 4N 4003 200 1N 4004 400 75 1194000 600 1N 4006 800 i „ « (A m ps)

DIODE 4004

Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

free IN 4007

Abstract: 4007 CDIL IN 4004 diodes IN 4007 DC IN 4007 diodes UF4005 diodes in 4007 UF4005 PACKAGE UF4001 4007
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer UF4001 - 4007 ULTRAFAST PLASTIC RECTIFIER DO-41 Plastic Axial Lead Plastic Package For use in Very High Frequency Switching Power Supplies, Inverters and as Free Wheeling Diodes

UF4005

Abstract: UF4007
Contextual Info: LESHAN RADIO COMPANY, LTD. UF4001 thru UF4007 1.Feature & Dimensions Ultrafast Rectifiers * Plastic package has Underwriters Laboratories * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

Contextual Info: LESHAN RADIO COMPANY, LTD. UF4001 thru UF4007 1.Feature & Dimensions Ultrafast Rectifiers * Plastic package has Underwriters Laboratories * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

diode 1N 4002

Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Contextual Info: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

a923

Abstract: cmos 4004 xtal 32768hz crystal 32768hz D200 amplifier data sheet transistor 9014 NPN DIODE 4004 in 4148 PIN DIAGRAM LCD Controller, STM Sunplus Caller ID
Contextual Info: Sunplus SPT6601A Data Sheet Preliminary 2001/04/30 Version 0.1 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

n4007

Abstract: LN4004 IN4007 n 4007 LN4005 ln4001 IN4003 74350 IN 4007 n 4002
Contextual Info: V 1 N4001 * 1 N4007 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Gleichrichter Applications: Rectifier Abmessungen In mm Dimensions in mm r »3,1 Absolute Grenzdaten Absolute maximum ratings Sperrspannung, periodische Spitzensperrspannung

A1N4001

Abstract: BYW 62 CB-210 F126 A1N645 diodes byw Diodes de redressement
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types •o Vr rm A (V) THOMSON-CSF / «F >FSM vF (A) «V) (A) 1 0,2 10 ms max 200 m A / Tam b = 25°C M 1 2 -F R 34 M 22 M 42 M 62 M 82 M 102 M 14 A1N645 1N 64 6 A1N647 1N 64 8 A 1 N 64 9 0,4 100 200

DO-213AB 4007

Abstract: 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes
Contextual Info: SM 4001.SM 4007 Type Polarity color band Repetitive peak reverse voltage Surge peak reverse voltage Maximum forward voltage Tj = 25 °C Maximum reverse recovery time IF = 1 A IF = - A IR = - A IRR = - A VRRM Surface mount diode Standard silicon rectifier

aaf marking sot23-5

Contextual Info: BAS 40 Silicon Schottky Diodes 32E D • aa3b32Q QQlbSlG 2 ISIP SIEMENS/ SPCLi SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing £ - available with C ECC quality assessment

D4148

Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Contextual Info: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_

1n4001 trr

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

SURFACE MOUNT SILICON RECTIFIER

Abstract: DO-214AC, SMA 1N4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

diode rectifier 1n4001

Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS

12 sot-23

Abstract: BAW100 ration BGX50A Schottky Diode SOT-89 BAV70 BAV74 BAV99 d400 78 sot-89
Contextual Info: Discrete Semiconductors Schottky diodes Type BAS 40-04 BAS 40-05 BAS 40-06 BAS 70-04 BAS 70-05 BAS 70-06 BAT 14-038 BAT 14-039 Maximum ratings h mA V 40 40 40 70 70 70 2 2 >40 >40 >40 >15 >15 >15 20 20 nA Cd pF Package outlines Pin configu­ Type ration No.

surface mount diode w1

Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

Contextual Info: UF4001 thru UF4007 Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching

Contextual Info: UF4001 thru UF4007 Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-204AL DO-41 Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

1N4007 sma

Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

uf4007 General Semiconductor

Contextual Info: UF4001 THRU UF4007 Ultrafast Plastic Rectifier Reverse Voltage 50 to 1000 V Forward Current 1.0 A DO-204AL DO-41 Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching

Contextual Info: mS I P S 7 y vv ^ 3 -K N o . Hi Single In-line Package Bridge Diodes 4002 4001 ode No. m< ~ k Short Lead S1VBO S1VBDZ S1VBAD D2SBD D2SBAn D2SBDL D3SBD D3SBDZ D3SBAD D4SBD D4SBDZ D 4SBOL D4SBSO D10XBD DlOXBdH L'Type Lead Outside Kink •iL t l 4rM416,244 1.

H24B2

Contextual Info: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.