40000A Search Results

DCR1576SY

Abstract: DCR1576SY44 DCR1576SY46 DCR1576SY48 DCR1576SY50 DCR1576SY52 K1P DIODES
Contextual Info: DCR1576SY DCR1576SY Phase Control Thyristor Advance Information Replaces January 2000 version, DS4355-4.0 DS4355-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 5200V ■ High Surge Capability IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt

DCR1576SV

Abstract: DCR1576SV52 DCR1576SY DCR1576SY52
Contextual Info: DCR1576SY / DCR1576SV DCR1576SY / DCR1576SV Phase Control Thyristor Advance Information Replaces February 2003 version, DS4355-6.0 DS4355-7.0 October 2003 KEY PARAMETERS PACKAGE OUTLINE VDRM 5200V IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt 300A/µs *Higher dV/dt selections available

DCR1576SV

Contextual Info: DCR1576SY / DCR1576SV DCR1576SY / DCR1576SV Phase Control Thyristor Advance Information Replaces February 2003 version, DS4355-6.0 DS4355-7.0 October 2003 KEY PARAMETERS PACKAGE OUTLINE VDRM 5200V IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt 300A/µs *Higher dV/dt selections available

GEC 44 3A I.C

Abstract: DCR1576SY4242
Contextual Info: 3Ë GEC P L E S S E Y o c t o b e r i 995 SE MI CO NDUC TOR S DS4355-2.1 DCR1576SY PHASE CONTROL THYRISTOR KEY PARAMETERS 5000V DRM 1770A | t AV 40000A ' tsm 1000V/|is dVdt* dl/dt 300A/|is APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies.

Contextual Info: DCR1576SY / DCR1576SV DCR1576SY / DCR1576SV Phase Control Thyristor Advance Information Replaces February 2003 version, DS4355-6.0 DS4355-7.0 October 2003 KEY PARAMETERS PACKAGE OUTLINE VDRM 5200V IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt 300A/µs *Higher dV/dt selections available

Contextual Info: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4355-3.0 DCR1576SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 5200V DRM 1720A Jt AV 40000A TSM dVdt* 1000V/(is d l/ d t

Contextual Info: OCTOBER 1995 DCR1576SY DS4355-2.1 DCR1576SY PHASE CONTROL THYRISTOR APPLICATIONS KEY PARAMETERS 5000V VDRM 1770A I T AV 40000A I TSM dVdt* 1000V/µs dI/dt 300A/µs • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. *Higher dV/dt selections available

DCR1576SY

Abstract: DCR1576SY44 DCR1576SY46 DCR1576SY48 DCR1576SY50 DCR1576SY52
Contextual Info: DCR1576SY DCR1576SY Phase Control Thyristor Advance Information Replaces January 2000 version, DS4355-4.0 DS4355-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 5200V ■ High Surge Capability IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1971N Key Parameters enndaten VDRM / VRRM 3800V … 4400V ITAVM 1730A TC=85°C ITSM vT0 40000A 3570A (TC=55°C) 1,29V rT 0,33mΩ RthJC 8,0K/kW Clamping Force 36 … 52kN

Thyristor t1401n

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1401N Key Parameters enndaten VDRM / VRRM 3800V … 4400V ITAVM 1590A TC=85°C ITSM vT0 40000A 3570A (TC=55°C) 1,29V rT 0,33mΩ RthJC 9,0K/kW Clamping Force 36 … 52kN

DCR1576SV

Abstract: DCR1576SV52 DCR1576SY DCR1576SY52
Contextual Info: DCR1576SY / DCR1576SV DCR1576SY / DCR1576SV Phase Control Thyristor Advance Information Replaces February 2003 version, DS4355-6.0 DS4355-7.0 October 2003 KEY PARAMETERS PACKAGE OUTLINE VDRM 5200V IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt 300A/µs *Higher dV/dt selections available

Contextual Info: DCR1576SY DCR1576SY Phase Control Thyristor Advance Information Replaces July 2001 version, DS4355-5.0 DS4355-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 5200V IT AV 2162A ITSM 40000A dVdt* 1000V/µs dI/dt 300A/µs ■ High Surge Capability

SH7707

Abstract: a888 513 w414 chr 2451 Hitachi ULSI Systems stc 640-8 8 pin ic lm 358 diode marking code 4n hitachi lcd lm 234 IRPF 650
Contextual Info: SH7707 Hardware Manual ADE-602-137 Rev.1.0 3/98 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole

HD6417709SBP100B

Abstract: HD6417709SF133 HD6417709SHF200 Hitachi DSA00280 sh7709s HA200
Contextual Info: Hitachi SuperH RISC engine SH7709S Hardware Manual ADE-602-250B Rev. 3.0 9/18/2002 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

a888 513

Abstract: ADE-602-156 fire alarm using 555 Hitachi Stacked CSP PDCR 900 PDCR 940 SH7709S HD6417709SF133
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

geode lx 800

Abstract: Athlon II X4 620 str W 6654 CS5536 pin diagram AMD Athlon 64 X2 AMD Geode GX geode cs5536 Verilog DDR memory model AMD Athlon 64 X2 pin diagram amd athlon II x2
Contextual Info: AMD Geode LX Processors Data Book May 2007 Publication ID: 33234F AMD Geode™ LX Processors Data Book 2007 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with

M8x35-2

Abstract: What is current carry capacity of 0.5 watt 1200 ohm test resistor LRD10 TDA 2010 1R00 SMT LRA351-010 FL-13-A LRD-10 marking code C3 SMD ic 0.005 ohm 2w 1225 size
Contextual Info: TOKEN Current Sensing Resistors Chip Current Sense / Open-Air Current Shunts / Axial Current Sense Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487

LDR bp2

Abstract: CT16M72S4D75 altera IC Date Code Formats
Contextual Info: Excalibur Solutions— Booting Excalibur Devices July 2002, ver. 1.1 Introduction Application Note 187 The Altera family of Excalibur embedded processor PLDs combines an unparalleled degree of integration and programmability on a single chip. The advantages of PLD flexibility, coupled with a high-performance

circuit diagram of split air conditioner

Abstract: circuit diagram for split air conditioner CTL-103
Contextual Info: OSI HALL-EFFECT CURRENT SENSORS MODEL CTl- RECTANGULAR WINDOW BUS BAR MODELS CURRENT RANGE MODEL NUMBER TYPICAL SENSOR OUTPUT SIZE 0 to 2500A CTL-502/2500 75mV G 0 to 3000A CTL-502/3000 90mV G 0 to 4000A CTL-502/4000 120mV G 0 to 5000A CTL-502/5000 150mV

AN187 Excalibur

Abstract: 304H AN187 ARM922T CT16M72S4D75
Contextual Info: Booting Excalibur Devices March 2003, ver. 1.2 Introduction Application Note 187 The Altera Excalibur devices combines an unparalleled degree of integration and programmability on a single chip. The advantages of FPGA flexibility, coupled with a high-performance embedded processor

Contextual Info: M ITEL DCR1576SY Phase Control Thyristors SEMICONDUCTOR Supersedes June 1997 version, DS4355 - 3.0 DS4355 - 3.1 March 1998 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. KEY PARAMETERS 5200V DRM 1720A Jt AV

HD6417707

Abstract: ptc wp 390 Hitachi DSA002782
Contextual Info: SH7707 Hardware Manual ADE-602-137 Rev.1.0 11/25/99 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole

Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current

Contextual Info: Preliminary information •■ AS29F040 5V 512Kx8 CM OS Flash EE PROM Features • Organization: 51 2 K x8 • Sector architecture - Eight 64K byte sectors - Erase any com bination of sectors or full chip • Single 5.0 ± 0 .5 V pow er supply for read/w rite operations