JUNEI997 Search Results

Contextual Info: Si GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4651-3.2 DCR1674SZ PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 3200A Jt AV 67000A TSM dVdt* 1000V/(is d l/d t 150A/(is

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4241-4.2 DCR818SG PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 4800V 425A Jt AV 7500A TSM dVdt* 1600V/(is dl/dt 150A/(is

transistor 80505

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4355-3.0 DCR1576SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 5200V DRM 1720A Jt AV 40000A TSM dVdt* 1000V/(is d l/ d t

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4448-3.2 DCR504ST PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 1400V DRM 355A Jt AV 6800A TSM dVdt* 200V/(is d l/ d t 700A/(is

Contextual Info: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4401-3.0 DCR1575SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 2010A Jt AV 44000A TSM dVdt* 1000V/(is d l/ d t

Contextual Info: GEC PLESSEY S i junei997 SEMI CO NDUC TOR S DS4648-5.2 D C R 1 6 7 5 S Z PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 5200V DRM 3000A Jt AV 50000A TSM dVdt* 1000V/(is d l/ d t

transistor 80505

Abstract: POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505
Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4712-1.3 ITS13F06 POWERLINE N-CHANNEL IGBT The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage