4,194,304-BIT 512K X 8 HIGH PERFORMANCE CMOS EPROM Search Results

27C010

Abstract: 27C020 27C080 NM27C040
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C080

Abstract: NM27C040 27C010 27C020
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

512K x 8 High Performance CMOS EPROM

Abstract: 27C010 27C020 27C080 NM27C040
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C020 27C080 A15C NM27C040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

27C010

Abstract: 27C020 27C080 A12C NM27C040
Contextual Info: January 1994 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

FM27C040

Abstract: 27C010 FM27C040QXXX
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity

NM27C040Q

Contextual Info: National NM27C040 & Semiconductor NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

27C010

Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

Contextual Info: SEMICONDUCTOR TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

8F08

Contextual Info: NM27C040 03 Semiconductor National ÆM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

J32AQ

Abstract: NM27C040 VA32A
Contextual Info: tm NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-com patibility with byte-wide

M27C040

Abstract: 27C040Q
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide

Contextual Info: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs

108362

Contextual Info: NM27C040 SIE D • bSOllEb QQb532b lib « N S C 3 -■ NATL SEMICOND MEMORY - 03 Semiconductor National ÆM NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­

Contextual Info: F = A IR C H IU D ì M I C O N D U C T O R TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

27C010X

Contextual Info: M IC O N D U C T D R Ju ly 1998 tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Program mable R e a d o n ly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide JEDEC EPROMs

WSI Corporation

Contextual Info: November 1994 NM27LV040/NM27LV040B 4,194,304-Bit 512k x 8 Low Voltage CMOS EPROM General Description Features The NM27LV040/NM27LV040B is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using National’s latest 0.8fi CMOS AMG tm

Contextual Info: Table of Contents Table of Contents S ec tio n 1 C M O S E P R O M s Standard Voltage E P R O M S .517 NMC27C16B 16,384-Bit 2048 x 8 CMOS E P R O M . 518

A1015

Contextual Info: r Z J SGS-THOMSON ^ 7 #« [MH S^(ô Hfui(gir^(ô)iiyiii(gg M23C4000 4096K 512K x 8 - 256K x 16) CMOS ROM ADVANCE DATA • BY 8 / BY 16 SOFTWARE CONFIGURATION. ■ VERY FAST ACCESS TIM E: 120 ns. (Chip select or address access time) ■ LOW POWER "CMOS" CONSUMPTION :

27C040

Abstract: 27C040-15 32-PIN
Contextual Info: p F f; 2 6 1990 Philips Components-Signetics 27C040 Docum ent No. E C N N o. Date of Issue November 1990 Status Objective Specification 4 MEG CMOS EPROM 512K x 8 Memory Products DESCRIPTION FEATURES The 27C040 CMOS EPROM is a 4,194,304 bit 5V read only memory

27C101

Abstract: 27C101A u4000
Contextual Info: JUL « fi ’ VT« PUMA 2U4000 molaic PUMA 2U4000-12/15 Issue 1.2 : July 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. / 4,194,304 bit CMOS High Speed UV EPROM Features Fast Access times of 120/150 ns Pin grid array gives 2:1 improvement over DIL.

0346C

Abstract: AT27BV040-12TI AT27BV040 AT27BV040-12JC AT27BV040-12JI AT27BV040-12TC AT27BV040-15JC AT27C040
Contextual Info: AT27BV040 Features • • • • • • • • • • Fast Read Access Time - 120 ns Dual Voltage Range Operation Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ± 10% Supply Range Compatible with JEDEC Standard AT27C040 Low Power CMOS Operation

tsop 3123

Abstract: 27LV040A AT27C040 AT27LV040A AT27LV040A-12JC AT27LV040A-12JI AT27LV040A-12TC AT27LV040A-12TI AT27LV040A-15JC AT27LV040A-15TC
Contextual Info: AT27LV040A Features • • • • • • • • • • Fast Read Access Time - 120 ns Dual Voltage Range Operation Low Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 10% Supply Range Compatible With JEDEC Standard AT27C040 Low Power 3.3-volt CMOS Operation