3TB 40 Search Results

BDV64

Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Contextual Info: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

Y182

Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
Contextual Info: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

EUPEC DD 89

Abstract: EUPEC DD 600 RPER GDD1257 EUPEC powerblock
Contextual Info: EUPEC bl E ]> m 34Q35T? 0001555 3Tb •IUPEÇ 4>1 DD 89 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t»] - - 4 0 ° C .tvj max V rrm Stoßspitzenspannung

Contextual Info: N Af1ER PHILIPS/DISCRETE b'lE D hh53^3l □QSfl441 3Tb I IAPX BUT18F BUT18AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: S â fllb b Z G ÜEISbD 3Tb PRELIMINARY CY2278A Pentium and Pentium II™ Compatible Clock Synthesizer/Driver for Mobile PCs Features Functional Description • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirements of mo­ bile Pentium™ and Pentium II™ motherboards

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

JE13070

Contextual Info: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:

2MB150L-120

Abstract: 2MB1200L-120 6MB150L-120 2mb1200 6MB150F 6MB115L-120 6MB125LB-120 1mb1300 1mb1300l-120 2mb1150
Contextual Info: m 22307^2 O O O B ^ T 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2M BI25F-120 2M BI50F-120 2M BI75F-120 2M BI100F-120 2M BI150F-120 SINGLES 1M BI200F-120 1M BI300F-120 VcE sat V ge =15V S w itching Tim e (Max.) lc Pc Cont.

IRL530

Contextual Info: 4ÛS54S2 001SÖS0 3Tb • INR International e Rectifier PD-9.562C IRL530 bSE J> INTERNATIONAL R E C T IF IE R HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature

Contextual Info: m 22307^2 □ 0 D 3 ci cn 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2MBI25F-120 2MBI50F-120 2MBI75F-120 2MBI100F-120 2MBI150F-120 SINGLES 1MBI200F-120 1MBI300F-120 VcE sat V ge=15V Switching Time (Max.) lc Pc R th RTH VF

Contextual Info: b3E D m • 4302271 0D4A424 3Tb « H A S CA Series HARRIS S E M I C O N D U C T O R Industrial High Energy Metal-Oxide HARRIS SEP1IC0ND SECTOR _ Disc Varistors vaiismia August 1993 Features • Provided Unpackaged For Unique Packaging By Customer • Solderable Electrode Finish Also Provides Pressure Contacts for

BMR10

Abstract: 78Q8360-CGT HTR12
Contextual Info: SILICON SYSTEMS INC b lE ]> • f l SSB Tb S -T -1 5 -H 9 ¿ é m ó ifs k m 00D83D3 3Tb S S I 7 8 Q 8 3 6 0 Ethernet Controller/ ENDEC Combo s A TDK Group/Company Prelim inary Data December 1992 DESCRIPTION FEATURES The SSI 78Q8360 is a combination Media Access

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

SPB-26

Contextual Info: • 7fi 2 flcm GGD603D 3Tb ■ RHM K /L ig h t Emitting Diodes SPB-26 SPB-26 Series 1.9 X 4.9mm Rectangular Dual-Color Lamps S erie s ÿt-fÿ-cj-jiS/Dimensions (Unit : mm) SPB-26 v ij - X l i , 2fe£3fc<7) JFi ( 1 .9 X 4 . 9 m m ) ¥ ® £ 3 t7 > 7 T ' t „ 3§

Sensick Sensors

Abstract: 3tb 40 B4210 LED infrared
Contextual Info: WF Fork sensors Fork sensors WF: Fork sensors for a wide range of applications • slot widths between 2 and 120 mm, slot depths of up to 60 mm, ■ high-precision adjustment via multiplex potentiometers, ■ versions with very short response times 30 µs and

Contextual Info: ADVANCED Surface Mount PLCC Sockets INTERCONNECTIONS, 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 80 0-4 2 4 -9 8 5 0 /4 0 1 -8 2 3 -5 2 0 0 •Fax 401-823-8723 • Email advintcorp@ aol.com Internet http://www.advintcorp.com "Precision" PLCC Sockets - Surface Mount Type

Contextual Info: .100" Boardmount Socket 929 Series Straight Solder Tails 1-40 contacts Tuning fork contact design Gold or tin lead plating Solder standoffs facilitate production wave soldering Optional board retention feature TS-0210-06 Sheet 1 of 2 P h y sica l Insulation

HUA72101

Abstract: HUA72202ALA330 HUA72302 HDS72161 HDS72202 MK5061GSYB HDT721010SLA360 samsung HD204UI F1U8X25HSBP HDT721010
Contextual Info: Intel RAID Controller RS2MB044 Tested Hardware and Operating System List THOL Revision 9.0 August 2011 Enterprise Platforms and Services Division Intel® RAID Controller RS2MB044 Revision History THOL Revision History Date ii July 2009 Revision Number

Contextual Info: TIM1414-10L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM 3 = - 4 5 dB c at Po = 29.0 dBm , G1dB = 5.0 d B at 14.0 GHz to 14.5 GHz S ingle Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED HIGH POWER ■ HERMETICALLY SEALED PACKAGE P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz

Contextual Info: SGS-THOMSON T S 3 7 0 4 C ,I,M m MICROPOWER QUAD CMOS VOLTAGE COMPARATORS N DIP14 Plastic Package D S 0 14 (Plastic Micropackage) ORDER CODES Part Number Temperature Range Package N D TS3704C 0°C, +70°C • • TS3704I -40°C, +125°C • • TS37Ö4M

Contextual Info: H igh S ta b ility TC X O s Features TO-200/210 TO-200 • Standard-TCXO sei-es • 10 to 35 MHz • 5 V simply • -20 to +70"C • Sinewave output • 20 x 20 x 10mm n&x2Q,5 I 1 TO-210 • Standard-TCXO series • 3 kHz to 35 MHz • 5 V supply • -20 to +70-C

Contextual Info: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design

Contextual Info: m o l e x 1.27mm .0 5 0 ” Pitch SIP Header FEATURES AND SPECIFICATIONS Features and Benefits Electrical • 8-circuit version only Current: 1.0A ■ Polarized PCB pegs ■ Void pin option Contact Resistance; lO Om Q max. Dielectric Withstanding Voltage; 250V AC/T min.

3tb 40

Abstract: LN5240K LN5240A LN524YA LN524YK
Contextual Info: Numeric Display /J \ 2 Digit 11.0mm . 4 ” Series Type No. Unit: mm Lighting Color LN 52 4Y A . Am ber LN 52 4Y K . Am ber L N 5 2 4 0 A .Orange L N 5 2 4 0 K .Orange