3TB 40 Search Results

BDV64

Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Contextual Info: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

Y182

Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
Contextual Info: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

transistor T43

Abstract: BUK553-60A BUK553-60B
Contextual Info: N AMER PHILIPS/DISCRETE b^E » b b iB 'm □G3G7E1D 3TB • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

EUPEC DD 89

Abstract: EUPEC DD 600 RPER GDD1257 EUPEC powerblock
Contextual Info: EUPEC bl E ]> m 34Q35T? 0001555 3Tb •IUPEÇ 4>1 DD 89 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t»] - - 4 0 ° C .tvj max V rrm Stoßspitzenspannung

siemens 3tb44

Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
Contextual Info: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail

Contextual Info: N Af1ER PHILIPS/DISCRETE b'lE D hh53^3l □QSfl441 3Tb I IAPX BUT18F BUT18AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: S â fllb b Z G ÜEISbD 3Tb PRELIMINARY CY2278A Pentium and Pentium II™ Compatible Clock Synthesizer/Driver for Mobile PCs Features Functional Description • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirements of mo­ bile Pentium™ and Pentium II™ motherboards

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

JE13070

Contextual Info: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:

2MB150L-120

Abstract: 2MB1200L-120 6MB150L-120 2mb1200 6MB150F 6MB115L-120 6MB125LB-120 1mb1300 1mb1300l-120 2mb1150
Contextual Info: m 22307^2 O O O B ^ T 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2M BI25F-120 2M BI50F-120 2M BI75F-120 2M BI100F-120 2M BI150F-120 SINGLES 1M BI200F-120 1M BI300F-120 VcE sat V ge =15V S w itching Tim e (Max.) lc Pc Cont.

IRL530

Contextual Info: 4ÛS54S2 001SÖS0 3Tb • INR International e Rectifier PD-9.562C IRL530 bSE J> INTERNATIONAL R E C T IF IE R HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature

Contextual Info: m 22307^2 □ 0 D 3 ci cn 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2MBI25F-120 2MBI50F-120 2MBI75F-120 2MBI100F-120 2MBI150F-120 SINGLES 1MBI200F-120 1MBI300F-120 VcE sat V ge=15V Switching Time (Max.) lc Pc R th RTH VF

Contextual Info: b3E D m • 4302271 0D4A424 3Tb « H A S CA Series HARRIS S E M I C O N D U C T O R Industrial High Energy Metal-Oxide HARRIS SEP1IC0ND SECTOR _ Disc Varistors vaiismia August 1993 Features • Provided Unpackaged For Unique Packaging By Customer • Solderable Electrode Finish Also Provides Pressure Contacts for

SBX1602

Abstract: CXD8129K CXP8129K sony 13 pin transformer 12 pin transformer sony CXD81 video auxiliary data sony transmitter SONY power transformer
Contextual Info: ö3öS3flB QODSbSM 3Tb «SONY SONY CXD8129K Preliminary D2 Video Receiver Coprocessor Description The CXD8129K is the co-processor of the serial interface transmitter in conformity with the Serial Digital inter­ face format for Composite Video. It's a CMOS Gate Array IC made by Sony. The device makes up a transmitter

FAH 23 LT

Abstract: 6810V 6730R E750R
Contextual Info: LEDTRONICS 27E D • 542370S 000034? 0 ■ '"pq\-3Tb C14.B2mm liS lT lm T i LEDTRONICS,Inc LEDTB D R X C S P R R T HD. LTD- DUAL DIG IT 7 SEGM ENT O.S6" NUMERIC DISPLAYS TELE:E13-B7B-7l»t1fc FAH* 213-676-0108 STD RED. HI-RED, HI-EFF RED/YELLOW/GREEN con.

BMR10

Abstract: 78Q8360-CGT HTR12
Contextual Info: SILICON SYSTEMS INC b lE ]> • f l SSB Tb S -T -1 5 -H 9 ¿ é m ó ifs k m 00D83D3 3Tb S S I 7 8 Q 8 3 6 0 Ethernet Controller/ ENDEC Combo s A TDK Group/Company Prelim inary Data December 1992 DESCRIPTION FEATURES The SSI 78Q8360 is a combination Media Access

Tater

Contextual Info: SflE D I N T E G R A T E D DE V I C E 4Û B S 7 7 1 CMOS STATIC RAM 256K 32K x 8-BIT D O l l b ö S 3Tb • IDT PRELIMINARY IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed CMOS static RAM • Equal access and cycle times

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

SPB-26

Contextual Info: • 7fi 2 flcm GGD603D 3Tb ■ RHM K /L ig h t Emitting Diodes SPB-26 SPB-26 Series 1.9 X 4.9mm Rectangular Dual-Color Lamps S erie s ÿt-fÿ-cj-jiS/Dimensions (Unit : mm) SPB-26 v ij - X l i , 2fe£3fc<7) JFi ( 1 .9 X 4 . 9 m m ) ¥ ® £ 3 t7 > 7 T ' t „ 3§

Contextual Info: m • PM15RHB120 S IE J> POlilEREX INC m 7 E * ï4 t S l DD0S7S4 3Tb WÊPRX Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB lH m o d ^ ^ -3 M o d u l& S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re ß p h a s e + Brake

18AF

Abstract: BUT18AF BUT18F UT18 BUT18
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F BUT18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control

catalog for 3RT series contactor* siemens

Abstract: catalog for 3tf series contactor* siemens 3RT siemens siemens contactor 3TF siemens magnetic contactor siemens contactor 3rt 3th42 siemens 3th42 catalog for 3RT Power contactor* siemens 3TB siemens contactor
Contextual Info: Controls – Contactors and Contactor Assemblies 3/2 3/4 3/8 3/30 3/31 3/34 3/35 3/38 3/43 3/46 3/53 3/54 3/55 3/56 3/58 3/61 3/62 3/64 3/66 3/67 3/68 3/69 3/73 3/74 3/75 Introduction 3RT, 3TB, 3TF Contactors for Switching Motors General data 3RT10 contactors, 3-pole, 3 . 250 kW

video auxiliary data

Abstract: CXD8
Contextual Info: •I Ö3ÖS3ÜB QQDSbSM 3Tb « S O N Y SO N Y CXD8129K Preliminary D2 Video Receiver Coprocessor Description T h e C X D 8 1 2 9 K is th e co-processor of th e serial interface transmitter in conformity with th e S erial Digital inter­ fa ce form at for Com posite Video. It's a C M O S G ate Array IC m ade by Sony. T h e device m akes up a transmitter

Contextual Info: Ö U AL IT Y T E C H N O L O G I E S CORP 57E » 74bbñ51 0 0 0 H im 3Tb •■ 3TY Optolsolator Specifications _ H 11A520, H 11A550, H 11A 5100 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H 1 1 A 5 2 0 , H 1 1 A 5 5 0 a n d H 1 1 A 5 1 0 0 co n s is t o f a g a lliu m