3N17 Search Results

3N170

Contextual Info: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

3N170

Abstract: 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch LLC 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input

3n169

Contextual Info: TYPES 3N169, 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 8 3 . M A R C H 1 9 7 3 EN H A N C E M E N T-T Y P E t MOS SILIC O N TRAN SISTO RS For Applications Requiring Very High Input Impedance, Such as

3N169

Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
Contextual Info: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5

3N172

Abstract: 3N172-73 3N173 X3N172-73
Contextual Info: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage

3N172

Abstract: 3N173
Contextual Info: 3N 172, 3N173 Diode Protected P-Channel Enhancement Mode MOS FET FEATURES • High Inp ut Impedance • Diode Protected Gate PIN DEVICE MAXIMUM RATINGS @ 25° C am bient unless noted 3N 172 3 N 1 Ï3 Gate to-Source Voltage -4 0 V -3 0 V V dss Drain to Source Voltage

intersil jfet

Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

Contextual Info: 3N170. 3N171 LINEAR SYSTEMS N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems Cr Ct A1 A T I1D C C . Unto. . VERY HIGH INPUT IMPEDANCE

1322

Contextual Info: 3N170 25 V - N-Channel Enhancement Mode MOSFET Switch 13.22 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N170 Online Store 3N170 Diodes 25 V - N-Channel Enhancement Mode MOSFET Sw itch Transistors Integrated Circuits Optoelectronics

3N165

Abstract: 3N170 3N171
Contextual Info: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)

Contextual Info: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device

3N170/D

Abstract: 3N170 3N171
Contextual Info: 3N 170, 3N171 N -C h a n n e l E n h a n ce m e n t M ode M O S FIET FEATURES PIN CONFIGURATION • Low Sw itching V olta g e s— VQS ttll} s 3.0 V • Fast Sw itching Tim es — tr s 10 ns TO -72 • Low Drain-Source Resistance rd8,on » 2000 (Max) M A X I M U M R A T I N G S (T a = 2 5 °C unless otherw ise noted)

2N4351 MOTOROLA

Abstract: 3N169 3N171 2N4351 3N170
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | fc,3b?SS4 GGflbt.7fl J'-iS'-XS' 3 | 3N169 thru 3N171 CASE 20-03, STYLE 2 TO-72 TO-2Û6AF M A X IM U M R ATINGS Sym bol V a lu e U n it D rain-Source V olta g e Vd S 25 Vdc D rain-G ate V oltag e Vd g ± 35 Vdc Gate-Source V olta g e

3N170-1

Abstract: 3N170 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input

3N170

Abstract: Hall 01E 3N171
Contextual Info: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­

amelco

Abstract: UNION CARBIDE
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

Contextual Info: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch calodic CO RPO RATIO N V 3N172/3N173 A B S O L U T E M A X IM U M R AT IN G S Ta = 25°C unless otherwise specified FEATURES • H igh Input Im pedance • D iod e P rotecte d G ate

3n170 intersil

Abstract: amelco
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

3n174

Abstract: ECRE
Contextual Info: TYPE 3N174 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 0 1 1 2 8 5 , J A N U A R Y 1970 E N H A N C E M E N T -T Y P E t MOS SILIC O N TR A N SISTO R For Applications Requiring Very High Input Impedance, Such as

3N163

Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
Contextual Info: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0

Contextual Info: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172/3N173 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172 . 40V

3N171

Abstract: VN10MA C 828
Contextual Info: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device

td 1603

Contextual Info: 3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

3N171

Abstract: 3N170 3N170-1
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)