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transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

brass Screw

Contextual Info: DWG. NO. S D 7 79 5-00 0-00 70 3N DESCRIPTION REV E BY DATE APPD o JO ER13305 s CO o Q _ r^- oo 00 to TERMINATED 75 OHM 7 7 9 0 -2 NORMAL THRU J3 =□- — r - « 9 WECO .090 J4 = 1 - q PATCH THRU ^D J1 J3 75 OHMS BNC WECO .090 ”5 ”

Contextual Info: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s

FR4 substrate antenna

Contextual Info: FR4 Antenna WLAN IEEE 802.11b Bluetooth 2.45GHz ISM Band (With Cable & mini PCI Connector) WPANTFR4001A Explanation of Part Number WPANTFR4 (1) (1) (2) (3) 001 (2) A (3) Product Series WPANTFR4 Product No. 001 Type Identifier A Application The antenna is used for RF communication by attaching

ipex reliability

Contextual Info: Dipole Antenna WLAN IEEE 802.11b Bluetooth 2.45GHz Band With Cable & mini PCI Connector WPANTFR4004A Explanation of Part Number WPANTFR4 004 A (1) (2) (3) (1) (2) (3) Product Series WPANTFR4 Product No. 004 Type Identifier A Quick Reference Data Item Antenna Dimension

ipex reliability

Contextual Info: Dual Band Antenna WLAN IEEE 802.11b Bluetooth and 11a 2.45/5.2GHz Band (With Cable & mini PCI Connector) WPANTFR4003A Explanation of Part Number WPANTFR4 003 A (1) (2) (3) (1) (2) (3) Product Series WPANTFR4 Product No. 003 Type Identifier A Quick Reference Data

2CDS200912R0001

Abstract: 2CTB815101R0700 2CTB815101R1600 2CTB803853R2400 for OVR T1 1N 25 255 TS DC 24V double POLE MCB 2CTB803853R5600 for OVR T2 1N 40 275 P TS earthing calculation for commercial building 2CTB815101R8900
Contextual Info: Surge Protection Devices OVR Range, System pro M compact OVR PLUS N1 40 No upstream MCB or fuse required NEW OVR Range, System pro M compact ® Summary General points on lightning and its risks Causes of transient overvoltages . 2

FR4 substrate antenna

Abstract: MHF series
Contextual Info: FR4 Multi-Purpose Antenna WLAN IEEE 802.11b Bluetooth IEEE 802.11a 2.45GHz & 5.2GHz Dual Band With Cable & mini PCI Connector WPANTFR4002A Explanation of Part Number WPANTFR4 002 A (1) (2) (3) (1) (2) (3) Product Series WPANTFR4 Product No. 002 Type Identifier A

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RS64

Abstract: MB85RS64PNF-G-JNE1 RS64 E1115
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-3v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-5v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00020-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128B • DESCRIPTION MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RC64A

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-1v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-5v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

RS64V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-2v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-3v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–10E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-1v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile