E1115 Search Results

Contextual Info: F -2 0 4 amtec L S 2 -1 3 0 -0 1 -L -D L S 2 -1 2 0 -0 1 -L -D -R A 1 2mm TERMIN AL/SOCKET LS2 SERIES S P E C IF IC A T IO N S M a te s w ith LS2 For complete specifications see www.samtec.com?LS2 In s u la to r M a te ria l: T O Liquid Crystal Polymer h u h o . E111594

Contextual Info: EDE5132AABG Package Drawing 128-ball FBGA Unit: mm 10.5 ± 0.1 0.2 S A 13.5 ± 0.1 INDEX MARK 0.2 S B 0.2 S 1.2 max. S 0.1 0.35 ± 0.05 S 128-B0.45 ± 0.05 B0.15 M S A B 0.4 B 12.0 0.8 A INDEX MARK 2.0 0.8 8.8 ECA-TS2-0255-01 Preliminary Data Sheet E1115E40 Ver. 4.0

704C

Abstract: E1115 b0504
Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S S N — LX01 1 7 0 4 C A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # DATE E1115 6 B /0 5 /0 4 NOTES: 1. MATERIAL; CLEAR POLYCARBONATE. 2, FRESNEL SURFACE, A~A *£ ,3 5 [ 0 0 , 0 9 3 ] El 'UNLESS OTHERWISE SPECIFED TOLERANCES PER DECIMAL fflECISIQN ARE; X = ± 1 <±0.039 , X J < = ± 0 5 (±0,020), m = ± 0 , 2 5 (M .910), X,XXX=±D,127 {±0,005).

Contextual Info: F-209 SQW–112–01–F–D–VS–LC SQW–114–01–F–6 SQW–110–01–L–5 TM 2mm TIGER BUY SOCKET SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SQW Insulator Material: Black Liquid Crystal Polymer FILE NO. E111594

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-1v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

RC256V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-4v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-5v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: F-204 FO LC -120 -04—S -Q F O L C -1 2 5 -0 1 -S -Q -L C m samTec ’ s| | | | | ; ^ < *§* * F O L C -1 2 0 -0 1 -P -Q ,050" x .050" SOCKETS SPECIFICATIONS Low Insertion Force contacts available Mates with: MOLC High reliability Tiger-Eye contacts For complete specifications

Contextual Info: F-204 DIFFERENTIAL RESULTS ,- Impedance^ C o n n e c to r / 3.56E-08 3.56E-08 3.57E-08 T im e s | Diff Z (FullBW) Signal Rise Time Z Max Z Min H Diff Z (1 OOps) Diff Z (500ps) 30 ps 100 ps 500 ps 113.2 52 100.0 Q 102.3 Q 100.0 Q 100.7 Q

E111594

Contextual Info: F-211 0,50mm .0197" (0,80mm) .0315" HQDP, EQDP SERIES HQDP–020–06.00–SEU–TTL–2–F EQDP–028–06.00–STR–TTL–3–B ® Q PAIRS TWINAX CABLE ASSEMBLIES SPECIFICATIONS For complete specifications see www.samtec.com?EQDP or www.samtec.com?HQDP

MB85RS64

Abstract: MB85RS64PNF-G-JNE1 RS64 E1115
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-3v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85RC16VPNF-G-JNN1E1

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-5v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

RS128A

Abstract: 30f 124 equivalent mb85rs
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-4v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

ASTM-B487-79

Abstract: MIL-STD-109 ASTM-B567 mil-m-24519 molding plastics ASTM-A754-79 E111594 MIL-S-83505 mil-std 1130b MIL-I-45607B MIL-P-45209
Contextual Info: FACTSHEET F-198 SPECIFICATIONS & TESTING Specifications and Standard Test Procedures Samtec products are subject to the following general specifications and standard test procedures. PLATING QUALITY ASSURANCE Quality program requirements ISO 9000 Specifications

Clare CG3-1.5L

Abstract: CG2-230L CG3-1.5L REMtech clare spark gap SPARK GAP 350v CG3-2.5L SPARK GAP CG3 5.0L cg3-8 CG2-350L
Contextual Info: TWO ELECTRODE SURGE ARRESTERS CG/CG2 Series DESCRIPTION REMtech’s two electrode CG/CG2 Comgaps are designed for a high degree of surge protection at a low cost. The CG Series 75-110V is primarily used for protection of test and communication equipment in which low voltage limits and extremely

MIL-STD-109

Abstract: ASTM-B487-79 1 clm 324 MIL-P-45209 ASTM-A754-79 ASTM-B567
Contextual Info: FACTSHEET F-199 SPECIFICATIONS & TESTING Specifications and Standard Test Procedures Samtec products are subject to the following general specifications and standard test procedures. QUALITY ASSURANCE PLATING Quality program requirements ISO 9000 Specifications

Contextual Info: F-209 SFMC–106–T2–S–D SFMC–118–T1–S–D SFMC–120–T2–S–D SFMC–110–T1–S–D . 050" 1,27mm PITCH SOCKETS SFMC SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SFMC Insulator Material:

Contextual Info: Choice of PVC or Teflon cable F-211 D•I•S•C•R•E•T•E 2,00mm .0787" Optional retention latching S2SD–30–24–L–05.00–SR S2SD, S2SDT, ISD2, CC81 SERIES ™ TIGER EYE DISCRETE WIRE SOCKET CABLE Mates with: T2M TYPE PINS PER ROW WIRE

Contextual Info: F-210-1 USB–B–S–S–B–SM USBR–B–S–F–O–TH USBC–MA–MB–B–B–S–2 USB-B, USBR-B, USBC SERIES STANDARD & RUGGED USB INTERFACES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?USB-B or www.samtec.com?USBR-B

Contextual Info: F-209-1 EQCD–040–40.00–TTL–STR–2 HQCD–030–06.00–TED–TED–1–F 0,50mm & 0,80mm COAX CABLES 36 AWG micro ribbon coax cable SPECIFICATIONS For complete specifications see www.samtec.com?HQCD or www.samtec.com?EQCD Cable: 36 AWG micro ribbon

Contextual Info: F-209 TMM–108–03–T–Q TMM–112–01–L–D–RA TMM–108–04–S–D TMM–116–01–G–S EXTENDED LIFE PRODUCT 10 Year Mixed Flowing Gas MFG 1,000 cycles when mated with SMM 2mm LOW PROFILE TMM SERIES SPECIFICATIONS For complete specifications

Contextual Info: F-211-1 0,50mm .0197" (0,80mm) .0315" HQDP, EQDP SERIES HQDP–020–06.00–SEU–TTL–2–F EQDP–028–06.00–STR–TTL–3–F ® Q PAIRS TWINAX CABLE ASSEMBLIES SPECIFICATIONS For complete specifications see www.samtec.com?EQDP or www.samtec.com?HQDP

Contextual Info: F-212 USBR–B–S–F–O–TH USB–B–S–S–B–SM USB-B, USBR-B SERIES STANDARD & RUGGED USB 2.0 SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?USB-B or www.samtec.com?USBR-B Insulator Material: High Temperature