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    E21200 Search Results

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    Infineon Technologies AG CYBLE-212006-01

    - Tape and Reel (Alt: CYBLE-212006-01)
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    Avnet Americas CYBLE-212006-01 Tape & Reel 1,000 58 Weeks 500
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    Mouser Electronics CYBLE-212006-01
    • 1 $16.32
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    Rochester Electronics CYBLE-212006-01 480 1
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    EBV Elektronik CYBLE-212006-01 53 Weeks 500
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    Infineon Technologies AG CYBLE-212006-PROG

    EZ-BLE Module Programming Kit - Bulk (Alt: CYBLE-212006-PROG)
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    Avnet Americas CYBLE-212006-PROG Bulk 1
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    Newark CYBLE-212006-PROG Bulk 5 1
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    Microchip Technology Inc DSC1001DE2-120.0000

    MEMS OSC, LVCMOS, 120MHz, 25PPM, 1.8-3.3V, -20 to 70C, 2.5 x 2.0mm - Rail/Tube (Alt: DSC1001DE2-120.0000)
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    Avnet Americas DSC1001DE2-120.0000 Tube 8 Weeks 280
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    Microchip Technology Inc DSC1001DE2-120.0000 Tube 30 Weeks
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    Master Electronics DSC1001DE2-120.0000
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    Microchip Technology Inc DSC1001DE2-120.0000T

    MEMS OSC, LVCMOS, 120MHz, 25PPM, 1.8-3.3V, -20 to 70C, 2.5 x 2.0mm - Tape and Reel (Alt: DSC1001DE2-120.0000T)
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    Avnet Americas DSC1001DE2-120.0000T Tape & Reel 8 Weeks 1,000
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    Microchip Technology Inc DSC1001DE2-120.0000T Tape & Reel 30 Weeks
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    Master Electronics DSC1001DE2-120.0000T
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    SiTime Corporation SIT9121AI-2C2-33E212.000000T

    ULTRA PERFORMANCE DIFFERENTIAL OSCILLATOR, -40 TO 85C, 5032, 25PPM, 3.3V, 212MHZ, OE, LVDS, SMD - Tape and Reel (Alt: SIT9121AI-2C2-33E212.000000T)
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    Avnet Americas SIT9121AI-2C2-33E212.000000T Tape & Reel 26 Weeks 3,000
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    E21200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MB85RC256VPF-G-JNERE2

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original
    DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2 PDF

    MB85RC256

    Abstract: RC256V FPT-8P-M08 E21200 2006FUJITSU
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original
    DS501-00017-0v01-E MB85RC256V MB85RC256V MB85RC256 RC256V FPT-8P-M08 E21200 2006FUJITSU PDF

    MB85RC256VPF-G-JNERE2

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-2v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original
    DS501-00017-2v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2 PDF

    MB85RC256

    Abstract: FPT-8P-M08 MB85RC256VPNF MB85RC256V
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original
    DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256 FPT-8P-M08 MB85RC256VPNF PDF

    RC256V

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-4v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original
    DS501-00017-4v0-E MB85RC256V MB85RC256V RC256V PDF