MB85RC256VPNF Search Results

MB85RC256VPNF Datasheets (1)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85RC256VPNF-G-JNERE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 1MHZ 8SOP	Original	PDF		2

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RAMXEED


RAMXEED MB85RC256VPNF-G-AMERE2 F-RAM 256kbit FeRAM with I2C serial interface, 5V - SOP8 (150mil) T&R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	MB85RC256VPNF-G-AMERE2					1 $5.14 10 $4.77 100 $4.41 1000 $4.15 10000 $3.95	Get Quote
	MB85RC256VPNF-G-AMERE2					1 - 10 - 100 - 1000 - 10000 $3.37	Get Quote
RAMXEED MB85RC256VPNF-G-AME2 F-RAM 256kbit FeRAM with I2C serial interface, 5V - SOP8 (159mil) tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	MB85RC256VPNF-G-AME2					1 $4.43 10 $4.23 100 $4.23 1000 $4.22 10000 $4.22	Get Quote
	MB85RC256VPNF-G-AME2					1 $4.43 10 $4.23 100 $4.23 1000 $4.22 10000 $4.22	Get Quote

MB85RC256VPNF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MB85RC256VPF-G-JNERE2 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2	PDF
MB85RC256 Abstract: RC256V FPT-8P-M08 E21200 2006FUJITSU Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00017-0v01-E MB85RC256V MB85RC256V MB85RC256 RC256V FPT-8P-M08 E21200 2006FUJITSU	PDF
MB85RC256VPF-G-JNERE2 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-2v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00017-2v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2	PDF
MB85RC256 Abstract: FPT-8P-M08 MB85RC256VPNF MB85RC256V Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256 FPT-8P-M08 MB85RC256VPNF	PDF
RC256V Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-4v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00017-4v0-E MB85RC256V MB85RC256V RC256V	PDF
MB85RC256 Abstract: MB85RC256VPF-G-JNERE2 Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00019-2v0-E MB85RC256V MB85RC256V 256K-bits MB85RC256 MB85RC256VPF-G-JNERE2	PDF