MB85RC128 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–5E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-3v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-2E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-2E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

MB85R

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-1E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

RC128A

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-1v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–4E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–8E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-4E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–3E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–10E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-2v0-E Memory FRAM 128 K 16 K  8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-6E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the