3G30B0 Search Results

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION

j15te

Abstract: photoconductive MCT 15TE2
Contextual Info: Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors are photoconductive HgCdTe elem ents on therm oelectric coolers. They are designed for in d u strial and m ilitary applications

FND-100

Abstract: FND-100Q FND100 FND100Q FND10 ultrafast photodiode ITT 254 Scans-002678
Contextual Info: E G & G 27E JUDSON 303üb0S D 0000107 I 7 7"-*/-57 F F S e rie s FND-100;FND-100Q;FOP-1QO // Features • • • • • • Large Active Area Wide Spectral Range Low NEP High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

Contextual Info: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and