3FT TRANSISTOR Search Results

transistor 2sc5386

Abstract: 2sc5386
Contextual Info: TOSHIBA 2SC5386 TOSHIBA TRANSISTOR i <;r * 3ft & SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV .15.5 + 0.5 HIGH SPEED SWITCHING APPLICATIONS & O VCB0 = 1500V High Voltage Low Saturation Voltage VCE sat = 3V (Max.)

1256C

Abstract: VN1706B VN1706D VN1706
Contextual Info: • LAE D SILICONIX INC S254735 0014012 A ■ VN1706B, VN1706D G T 'S S ilic ilicoont . ix_ ¡i c o rp o ra te d in N-Channel Enhancement-Mode MOS Transistors T-3ft-os PRODUCT SUMMARY PART NUMBER TO-2Q5AD TO-39 V(BR)DSS ros (ON) (n ) (V) Id (A) PACKAGE

Contextual Info: 2SJ105 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE i <; 1 1 n s Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS High Breakdown Voltage : VQ£ g = 50V T njroo oo = 1-n ^ A Ì M a v ì' f' V- un oci = 3ft

BUZ11

Abstract: BUZ11s2
Contextual Info: SILICÓNIX INC 1ÖE D XKS3& • Ö25M73S 0014505 =1 ■ BUZ11, BUZ11S2 T-3ft -11 N-Channel Enhancement Mode Transistors TQ-220AB TO P VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS BUZ11 BUZ11S2 O •d "■ sr (A 50 0.040 30 60 0.040 30 1 GATE 2 DRAIN (Connected to TAB)

Transistor BFT 10

Abstract: transistor 3Ft bux c 651 emetteur 3ft73
Contextual Info: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature

LA4630

Abstract: la4630n 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 40W stereo amplifier capacitor RG 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC
Contextual Info: Ordering num ber:EN 3227A Monolithic Linear 1C I N0.3227A LA4630N SAXYO 9V/12V 3-Dimension Power IC for Radio Cassette Recorders I Features • Stereo section 9V/3ft 3WX2, 12V/3fl 5WX2: noise filter capacitorless power • Super bus section 9V/3H 6W, 12V/3H 10W: output capacitor, B-S capacitorless power

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

aeir

Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
Contextual Info: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«

transistor b228

Abstract: transistor Sh 550 2DI240A-055 35-40kgf-cm B-228 LC240A BA rx transistor
Contextual Info: 2Dl24OA-O55 240A >£ • Outline POWER TRANSISTOR MODULE _ a»o : Features • Drawings M) 180 . " "] æ a ' t -a n ¿1 - - H igh V o lta g e In c lu d in g Free W h e e lin g D io d e • ASO E xcellent Safe O p e ra tin g Area • TibiyjM Insu lated Type

B-457

Abstract: b457 2DI100Z-140 30S3 T151 T810 SM470 B-459
Contextual Info: 2DI100Z-140 iooa Outline Drawings POWER TRANSISTOR MODULE ’ Features • BüfÆ High Voltage • 7 lJ— 's W tâ —Ki^930c Including Free Wheeling Diode • A SO ^ / av,' Excellent Safe Operating Area Insulated Type • A pplications » Power Switching

zener diode mv 5T

Abstract: J32C j32-C E82988 sf p151 1DI400MN-120 M118 P151
Contextual Info: 1 D I 4 0 0 M N - 1 2 0 4 0 0 A /< > 7 _ f- v X ^ i : Outline Draw ings a . — JU POWER TRANSISTOR MODULE : j V i ‘T ” .v F e a tu re s • hFE*'”^ ' High DC Current Gain 'i'. ¡5. • ffla fs /,M* : A p p lic a tio n s • tfL R 'f > '< — ? General Purpose Inverter

Contextual Info: 1 D I4 0 0 M /< > 7 _ f- v X ^ N - i 1 2 0 4 0 0 A a . — JU : Outline Draw ings POWER TRANSISTOR MODULE : j V i ‘T ” .v F e a tu re s • hFE*'”^ ' High DC Current Gain 'i'. ¡5. • ffla fs /,M* : A p p lic a tio n s • tfL R 'f > '< — ? General Purpose Inverter

transistor 3bt

Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
Contextual Info: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,

transistor 3bt

Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Contextual Info: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface

KF 35 transistor

Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Contextual Info: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications

power bjt transistor 600v

Abstract: 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack
Contextual Info: FU JI 6-Pack BJT 600 V 20 A 6DI20C-050 MUM STOSOÊ : Outline Drawings POWER TRANSISTOR MODULE : Features y > 9 ¥ 4 1 — Ff tM • 7 U— • h F E ^ 'iiji' • Including Free Wheeling Diode High DC Current Gain Insulated Type ' A pplica tio ns • DC * —9 U'M

6DI30A-120

Abstract: transistor 3Ft transistor and schematic symbols M606 fuji bjt
Contextual Info: 6DI30A-120 FUJI BTD8DE 6-Pack BJT 1200 V 30 A • Outline Drawings POWER TRANSISTOR MODULE I «.I « ^ Features • SW /± EU 0V EV BWEW fïi * EX High Voltage • 7»j — y Krt / f t A C Motor Controls . Air Conditionens t #*14 • Maximum Ratings and Characteristics

IGBT 1MBH60-100

Abstract: 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60
Contextual Info: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS

200Z-100

Contextual Info: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode

transistor 131-6

Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
Contextual Info: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

1jx130

Abstract: SD1272 VI-211-17 M135 TRANSISTOR 1300 3B
Contextual Info: •1 a t m RF P ro du cts M ic m m s e m i 140 Com merce Drive Montgomery ville, PA 18936-1013 Tel: 215 631-9840 SD1272 RF & MICROWAVE TRANSISTORS 130i. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V POWER OUT 25W POWER GAIN 9.2dB

fmw5

Contextual Info: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>