3E3G Search Results

T2D 53

Abstract: T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56
Contextual Info: ^EDI EDI8F2464C 61ÉCTRONC 065K3NS N C . 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM 64Kx24 bit CMOS Static module organized as 64Kx24. This module is constructed Random Access Memory

TME 57

Abstract: D02S D012 D031 EDI8M3264C
Contextual Info: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static

3E3G

Abstract: 4-173856-1 F KO 317
Contextual Info: 1 * PC B O A R E D D I M E N S I O N u l- afcflggt'M-g*: 0.5 NOTE iâË; 10.6 ± 7 3. 0.3 (THK) 1. (TOL) 'J>m 2. fcO. 3 : 1 .6±0 . 15 : ±0. 1 2-03.2 2 02.4 7.35 r - MAX ABSEILx A o 2mmcof&e]-r"iflijæ ^ ^ ¿T £ Äfi-^c=0«Ä#g; £: ifflÆ. L. ~C «t'Ô'-C #

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

D17103

Abstract: IC-7901 17P103 KG3T PD17103GS 22r j ju hx AEI 7707 PJ73 oj4 1001 YCIJ
Contextual Info: M o s sfs m s ê M O S I n t e g r a t e d C irc u it / 4 tf'y h / P D 1 m f è T - ï 1 3 , 1 7 1 3 A 7 7 '- 7 - f i 'P a > l 'n - 7 ‘ juPD 17103, 17103(A) f i, R O M l K ^ - f I- (S12 x C PU C tt, 7 16 t i - y t-), RAM 16 x 4 t -y K I /O iti — h-

g4 5c

Abstract: NT30C
Contextual Info: R e s s e 163 □ HM3 + / - 107. P T C : . 7/1/3 □ P E P A T I N G P A NG E : - 5 5 T □ 1 0 0 C 3 T E P A G P PA NCE : - 0 5 TP 150 C * T H E R M A L T I M E C E N 3 T A N T :3 0 3 E C MAX * D I 3 3 I P A T I D N IO□ N3 T A N T ! P , 5 nW/ 3 M I N F'PWPF: P A T I N G : , P 5 W 3 3 5 S , D U R A T E T P ICn