3DD3 Search Results

DD105N16L

Abstract: DD55N14L 660v DD31N14L DD31N08L DD55N08L DD76N16L DD76N14L 310f diode 310F
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35 °C mit Strangsicherungen click on "Maßbild" No. for download Typenbezeichnung Bauelement Kühlkörper Sicherung B6U 230/310 - 65S - KM33-3DD31N-RCS B6U 230/310 - 100S - KM33-3DD55N-RCS

Contextual Info: O0%;87F;?70/3DD3@FK O0-%FA0BBDAH76 O0+&"0E0A?B>;3@F03:;9:0>;@704 O0-@;H7DE3>0"@BGF03F070CF.4 O0!;9:088;5;7@5K O0*A!+0A?B>;3@F07E;9@  :0$3-(50(*/(054020F22.+&$5+104 35FADK0GFA?3F;A@ ,7EF020&73EGD7?7@F GFA?3F760+7DH;57 !/+DAA7BFAA0+7D;7E

3DD303

Abstract: 3DD30
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.

3DD3853

Abstract: 3DD38
Contextual Info: 3DD3853 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

3DD3852

Abstract: 2A1010 3DD38
Contextual Info: 华晶分立器件 3DD3852 低频放大管壳额定双极型晶体管 1 概述与特点 3DD3852 硅 NPN 型低频大功率晶体管，主要用于彩色电视机的枕形失真校正电路。其特点如 下： ● 高电流增益 ● 饱和压降低 ● 封装形式：TO-220F

transistor d325

Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
Contextual Info: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511

3DD3853

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DD3853 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) 1. BASE 2. COLLECTOR

3DD3852

Abstract: 3DD38
Contextual Info: 3DD3852 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: N0A070BA.0!@BGF0FA0&FABFF9!AFB N0&9!0BDD0+:A5=03@60.;4D3F;A@ N03E70B>3F70AA>76 N0G>>0 AI7D03F005BAAM043E70B>3F7 N0;H70173D0/3DD3@FK (80$2,(40(*.(/43020F11-+&$4+0/3 *3;>I3K0BB>;53F;A@E +G;F34>708AD043FF7DK0BAI7D760D3;>I3K0EKEF7?E (AI7D0(>3@FE

NPN transistor collector base and emitter

Abstract: TV power transistor datasheet 3DD303
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303C DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

3DD303A

Abstract: CBO 40V CEO 25V EBO 5V 3DD303
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

DD105N16L

Abstract: DD540N22K DD600N08K DD61N14L DD260N16K DD61N08L DD105N DD105N08L DD61N14 DD61N16L
Contextual Info: B6U - Schaltung Wasserkühlung TW = 25°C click on "Maßbild" No. for download Typenbezeichnung Bauelement Kühlkörper B6U 230/310 - 205W - KW30-3DD61N B6U 230/310 - 280W - KW30-3DD105N B6U 230/310 - 470W - KW61-3DD171N B6U 230/310 - 710W - KW61-3DD260N B6U 230/310 - 950W - KW61-3DD350N

3DD3852

Abstract: 3DD3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DD3852 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) 1. BASE 2. COLLECTOR

3DD301D

Abstract: IC 3A 3DD30
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD301D DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 150V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

Contextual Info: JW- 8 9 1993 H a r r is a H I 1Ë 1t 6 6 Ê È È S E M I C O N D U C T O R 8-Bit, 250MSPS Flash A/D Converter ju iy 1993 Features • Description Differential Linearity Error ±0.5 LSB or Less The HI1166 is an 8-bit ultra high speed flash Analog-to-Digital converter IC capable of digitizing analog signals at a max­

MSM6411A

Abstract: CMOS 4-bit Microcontroller
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

HY57V161610B

Contextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of

RQ3F

Abstract: a56 transistor cbb9 68a diode diode 68A 91AB A13A BDAA876 rq-3f RE53
Contextual Info: 86/.6 \x*1_hdt] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR V dbo EI;F5:;@9 53B34;>;FK t;>7 |A`lsceefjc V g=/ 6;7>75FD;5 EFD7@9F: \47FI77@ 5A;> 3@6 5A@F35FE] V cb=/ ;?BG>E7 I;F:EF3@6 HA>F397 \47FI77@ 5A;> 3@6 5A@F35FE] t;>7 |A`l+kkefbjk V 5D77B397 6;EF3@57l j? V ~qp [ *q >3KAGFE 3H3;>34>7

BDAA876

Contextual Info: 97.0-7 <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gah=/ 6;7>75FD;5 EFD7@9F: u;>7 |Aamtdfghdj \47FI77@ 5A;> 3@6 5A@F35FE] D 5 6 U w73HK >A36 GB FA iehc/p U x673> 8AD ?AFAD EI;F5:;@9 u;>7 |Aam gccegdge U ~rq [ *r >3KAGFE U t@H;DA@?7@F3> 8D;7@6>K BDA6G5F \+Aw, 5A?B>;3@F]

msm6404

Contextual Info: O K I se m ico n d u cto r MSM6404 HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION The OKI M S M 6404 microcontroller is a low power, high-performance single-chip device implemented in complementary metal oxide semiconductor technology. 32K bits of mask program

7477 D latch

Abstract: SAB 3210 MSM6408 i1p32 si117 3DD52
Contextual Info: SflE J> m b?24S4D G01371D 7flfl • OKI J O K I semiconductor MSM6408 O K I < /4 SEMICONDUCTOR GROUP HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION T h e O K I M S M 6 4 0 8 m ic ro c o n tro lle r' is a low power, h ig h-perfo rm an ce sin g le -ch ip device

Contextual Info: O K I semiconductor MSM6404 HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION The OKI M S M 6404A m icrocontroller Is a low power, high-performance single-chip device implemented in complementary metal oxide semiconductor technology. 32K bits of mask program

6n81

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS6R06VE3_B2 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43