3D0K Search Results

Contextual Info: S c h e m a tic : n H .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 1500 Vrm s Input to O utput Isolation Voltage: 5 0 0 Vrm s (P 1 + 2 + 3 to P 4-+5+6) Turns Ratio: TX 1CT:1CT ±3% RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum @100KHz 100m V 8mADC

Contextual Info: _LTC1061 uTECHNOLOGY r m High Performance Triple Universal Filter Building Block F€ A TU R € S D C S C A IP TIO fl • Up to 6th Order Filter Functions with a Single 20 Pin The LTC1061 consists of three high performance, univer­ sal filter building blocks. Each filter building block to­

160i

Abstract: Elise h226 1x100 aran IRHM7230 IRHM8230 RHM7230 RHM8230 DIODE C249
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7S30 o . IRHMS230 N-CHANNEL MEGA RAO HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARO technology HEXFETs

fht 8v

Abstract: BStG 0240 10UF MT8860 MT8860XC MT8860XE MT8865 MM860
Contextual Info: MT8860 DTMF Decoder CM OS MITEL F e b ru a ry 1985 Features Central O ffice qu ality detection Excellent voice talk-off D etect times do w n to 20ms Single supply 5V or 8 to 13V operation Latched three-state buffered outputs Detects all 16 DTM F combinations

square wawe to sine converter

Abstract: MKL RESISTORS CC12S
Contextual Info: HA RR IS SEMICON] S E CT OR 3 SflE I> • 430 2 27 1 004 3 78 8 bT2 H H A S HS-9008HH T - 51- V O -O S PRELIMINARY CMOS 8 Bit Flash Analog-to-Digital Converter December 1992 Pinouts • Excellent Noise Rejection - Fully Differential Design 28 PIN CERAMIC DIP CASE OUTLINE D1, CONFIGURATION 3

XF020

Abstract: lv 02a
Contextual Info: 2. Schematic: 1. M e c h a n ic a l D im e n s i o n s : 8 0.260 Max 8 5 XFMRS XF0206 -4CMC • . 7 3. Electrical 0.030 o in o d 0.050 □□0 1 -25dB Typ @1MHz □ o C\l o □ o o: BOTTOM VIEW Specifications: @25°C 0CL: 20uH Min @1QKHz 0.1V Each winding

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: 1. M e c h a n i c a l D i m e n s i o n s : 2. S c h e m a t i c : SEC PRI 160- P rim ary Line 1 3 -O 2 1 ^ 0_ 1 4 o- Secondary (Device— Tx) -o 4 -o 5 10 7 6 rO O Secondary (Device— Rx) 8 3. Electrical Specifications: @25“C □ C L : P in s 1 6 -9