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    ARAN Search Results

    ARAN Datasheets (70)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge MMBT3906 2A(RANGE:100-300)
    JCET Group MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT1616A(RANGE:135-270)
    JCET Group MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. Original PDF
    badge MMBT1616A(RANGE:200-400)
    JCET Group MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. Original PDF
    badge BC546-TA(RANGE:200-450)
    JCET Group NPN transistor in TO-92 package with high voltage capability, complement to BC556/BC557/BC558; available in BC546, BC547, and BC548 variants with collector-emitter voltage ratings from 30V to 80V and DC current gain from 110 to 800. Original PDF
    badge 2SB709A(RANGE:210-340)
    JCET Group PNP transistor in SOT-23 package with -45 V collector-base and collector-emitter voltage, -100 mA continuous collector current, 200 mW power dissipation, DC current gain from 160 to 460, and transition frequency of 60 MHz. Original PDF
    badge D965-TA(RANGE:560-950)
    JCET Group NPN transistor in TO-92 plastic package, with collector-base voltage of 42V, collector-emitter voltage of 22V, collector current of 5A, and DC current gain ranging from 340 to 2000, suitable for audio amplification, camera flash units, and switching circuits. Original PDF
    badge MPS2907A(RANGE:200-300)
    JCET Group PNP transistor in TO-92 package with -60V collector-base and collector-emitter voltage, -0.6A continuous collector current, 0.625W power dissipation, and DC current gain from 100 to 300 at -150mA collector current. Original PDF
    badge 2N5551K-TA(RANGE:200-300)
    JCET Group NPN transistor in TO-92 package, rated for 160 V collector-emitter voltage, 600 mA continuous collector current, 625 mW power dissipation, with DC current gain up to 300 and transition frequency up to 300 MHz. Original PDF
    badge BC857A(RANGE:125-250)
    JCET Group PNP transistors in SOT-23 package, including BC856A/B, BC857A/B/C, and BC858A/B/C, designed for switching and audio frequency amplifier applications, with collector current up to 0.1 A and power dissipation of 200 mW. Original PDF
    badge 2SD965A(RANGE:340-600)
    JCET Group NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 5A continuous collector current, 750mW power dissipation, and DC current gain ranging from 230 to 800. Original PDF
    badge BF420-TA(RANGE:MIN=50)
    JCET Group NPN transistor in TO-92 package, with 250V collector-emitter breakdown voltage, 100mA continuous collector current, 0.83W power dissipation, and 60MHz transition frequency, suited for Class-B video output stages. Original PDF
    badge 2SA1013-TA(RANGE:160-320)
    JCET Group PNP transistor in TO-92L package with -160V collector-base and collector-emitter voltage, continuous collector current up to -1A, DC current gain ranging from 60 to 320, and transition frequency of 15MHz. Original PDF
    badge BC638-TA(RANGE:100-250)
    JCET Group PNP transistors BC636, BC638, and BC640 in TO-92 package with high current capability, featuring collector current up to -1 A, collector-base voltage from -45 V to -100 V, and DC current gain up to 250. Original PDF
    badge MPS2907A-TA(RANGE:200-300)
    JCET Group PNP transistor in TO-92 plastic package with collector current up to -600 mA, collector-emitter voltage -60 V, power dissipation 625 mW, DC current gain hFE from 78 to 300, and transition frequency 200 MHz. Original PDF
    badge 2SA1015-TA(RANGE:200-400)
    JCET Group PNP transistor in TO-92 package with 400 mW power dissipation, -50 V collector-base and collector-emitter breakdown voltage, DC current gain from 70 to 400, and transition frequency of 80 MHz. Original PDF
    badge BC337-TA(RANGE:160-400)
    JCET Group NPN transistor in TO-92 package with collector current up to 800 mA, collector-emitter voltage up to 45 V for BC337 and 25 V for BC338, power dissipation 625 mW, and DC current gain from 100 to 630 depending on rank. Original PDF
    badge BC637-TA(RANGE:100-250)
    JCET Group NPN transistors BC635, BC637, and BC639 feature high current handling with continuous collector current of 1 A, collector-emitter voltage ratings from 45 V to 80 V, power dissipation of 0.83 W, and DC current gain up to 250, housed in TO-92 package. Original PDF
    badge 2SC1815-TA(RANGE:200-400)
    JCET Group NPN transistor in TO-92 package with collector-base voltage of 60 V, collector-emitter voltage of 50 V, continuous collector current of 0.15 A, and power dissipation of 400 mW. Original PDF
    badge BF423-TA(RANGE:MIN=50)
    JCET Group PNP transistor in TO-92 package with -250V collector-emitter voltage, -100mA continuous collector current, 60MHz transition frequency, and low feedback capacitance of 1.6pF, suited for Class-B video output stages. Original PDF
    badge 2SC2001-TA(RANGE:135-270)
    JCET Group NPN transistor in TO-92 package with high hFE and low VCEsat, featuring collector-base voltage of 30V, collector current up to 700mA, and DC current gain (hFE) ranging from 90 to 400. Original PDF
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    Same Sky SLW-1298856-5A-RA-N-D

    12.9 X 8.8 X 5.6 MM, 5 MM RAISED
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    Mouser Electronics SLW-1298856-5A-RA-N-D 445
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    15 X 4.7 X 6.9 MM, 4 MM RAISED S
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    Mouser Electronics SLW-1474769-4A-RA-N-D 954
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    19.8 X 15 X 9.4 MM, 6 MM RAISED
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    DigiKey SLW-1981594-6A-RA-N-D Box 2,976 1
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    17 X 13 X 7.5 MM, 7 MM RAISED SL
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    DigiKey SLW-171375-7A-RA-N-D Box 2,797 1
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    Mouser Electronics SLW-171375-7A-RA-N-D 953
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    14.2 X 11 X 6.5 MM, 9 MM RAISED
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    ARAN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    98-16NO7

    Abstract: 98-12NO7 98-08NO7
    Contextual Info: VUO 98 IdAV = 100 A VRRM = 800-1600 V Three Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS16 Types ~A 1 ~L 9 ~ K10 VUO 98-08NO7 VUO 98-12NO7 VUO 98-14NO7 VUO 98-16NO7 EG 1 Pin arangement see outlines


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    98-08NO7 98-12NO7 98-14NO7 98-16NO7 98-16NO7 98-12NO7 98-08NO7 PDF

    25t120

    Abstract: PS18 SV18 NTC 279 T 200
    Contextual Info: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines


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    25-12P1 25-12P1 25T120 25t120 PS18 SV18 NTC 279 T 200 PDF

    Contextual Info: FAST CMOS BUFFER/CLOCK DRIVER IDT49FCT3805/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: 0 .5 M IC R O N C M O S Technology T h e F C T 3 8 0 5 /A is a 3 .3 volt, non-inverting clock driver built G u aranteed low skew < 500p s m ax. using advanced dual m etal C M O S technology. T h e device


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    IDT49FCT3805/A IL-STD-883, PDF

    Contextual Info: IDT74FCT3807/A 3.3V CMOS 1-TO-10 CLOCK DRIVER In te g rate d D ev ice T ech n ology , Inc. FEATURES: DESCRIPTION: • 0 .5 M IC R O N C M O S Technology • G u aran teed low skew < 3 5 0 p s m ax. • V ery low duty cycle distortion < 3 5 0p s (m ax.) •


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    IDT74FCT3807/A 1-TO-10 MO-150, /13/V PDF

    Contextual Info: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions


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    75-06P1 75-06P1 42T60 PDF

    aerx

    Abstract: TMC2330A marking ACCI
    Contextual Info: Raytheon Electronics Semiconductor Division TMC2330A Coordinate Transform er 16 X 16 Bit, 50 M O P S BROADCAST VIDEO Features • R ectan g u lar-to -P o lar o r P o lar-to -R ectan g u lar conversion at g u aran teed 5 0 M O P S p ip elin ed th ro u g h p u t rate


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    TMC2330A 16-bit 32-bit input/16-bit TMC2330A TMC2330AH5C 120-Pin 2330AH5C aerx marking ACCI PDF

    Contextual Info: VWI 15-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 = 18 A = 1200 V = 2.3 V K 12 N9 R5 NTC X 18 W 14 K 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


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    15-12P1 B25/50 PDF

    Contextual Info: MOTOROLA r^i rn fi SN54LS54 SN74LS54 rn n°i ryi r°i 3-2-2-3-INPUT A N D -O R -IN V E R T GATE LOW POWER SCHOTTKY □ liJ LU LU HI LJ J Suffix — Case 632-07 Ceramic N Suffix — Case 646-05 (Plastic) G U ARAN TEED OPERATING RANGES SYM B O L MIN TYP MAX


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    SN54LS54 SN74LS54 PDF

    Contextual Info: g MOTOROLA SN54LS86 SN74LS86 TRUTH TABLE O UT IN -Se> A B z L L L H H L H L H H H L Q U A D 2-INPUT EXCLU SIVE O R G ATE U L L I LU LU LI! LU 1_l 3 LOW POWER SCHOTTKY J Suffix — Case 632-07 {Ceramic} N Suffix — Case 646-05 (Plastic) GU ARAN TEED OPERATING RANGES


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    SN54LS86 SN74LS86 PDF

    Contextual Info: g M OTOROLA SN54LS22 SN74LS22 Vcc R R R R R R R DUAL 4 -INPUT NAND GATE □ QTiJH Hl-niJ LOW POWER SCHOTTKY ‘ OPEN COLLECTOR OUTPUTS J Suffix — Case 632-07 (Ceramic) N Suffix — Case 646-05 (Plastic) G U ARAN TEED OPERATING RAN GES S YM BO L MIN TYP


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    SN54LS22 SN74LS22 74for PDF

    Contextual Info: g MOTOROLA SN54LS04 SN74LS04 Vcc -£ > °- -t> ° - -> ° - •>o- t> ° - HEX IN V ERTER Q L iï'lîJ LAJ LU l±J IzJ LOW POWER SCHOTTKY J Suffix — Case 632-07 (Ceramic) N Suffix — Case 646-05 (Plastic) G U ARAN TEED OPERATING RANGES PARAMETER MIN TYP


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    SN54LS04 SN74LS04 PDF

    NTC 2.5 0646

    Abstract: VX-18 PS18 SV18
    Contextual Info: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 n Pin arangement see outlines


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    75-06P1 75-06P1 42T60 NTC 2.5 0646 VX-18 PS18 SV18 PDF

    tag 8534

    Abstract: N5290 MN5290 IN5290
    Contextual Info: MN5290 MN5291 hh HIGH-RESOLUTION EXTENDED-TEMPERATURE AID CONVERTERS MICRO NETWORKS DESCRIPTION FEATURES • 16-Bit R eso lution • 14-Bit P erform ance G u aranteed O ve r Tem perature • 40/iSec Max C onversion T im e ± 0 .0 0 3 % FSR M axim um L in e a rity Error


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    MN5290 MN5291 16-Bit 14-Bit 40/iSec 1080mW N5291 MN5291, tag 8534 N5290 IN5290 PDF

    Contextual Info: VWI 15-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 = 18 A = 1200 V = 2.3 V K 12 N9 R5 NTC X 18 W 14 K 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arangement see outlines Features t IGBTs Maximum Ratings VCES TVJ = 25°C to 150°C


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    15-12P1 B25/50 PDF

    D-68623

    Contextual Info: VWI 15-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 = 18 A = 1200 V = 2.3 V K 12 N9 R5 NTC X 18 W 14 J 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


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    15-12P1 B25/50 D-68623 PDF

    237td

    Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions


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    50-06P1 25T60 237td PDF

    NTC 303

    Abstract: SV18 PS18
    Contextual Info: VDI 100-06P1 VII 100-06P1 VID 100-06P1 VIO 100-06P1 IC25 = 93 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 Pin arangement see outlines


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    100-06P1 100-06P1 NTC 303 SV18 PS18 PDF

    Contextual Info: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines


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    42T60 75-06P1 PDF

    8103614RX

    Contextual Info: AmPALt 6R8 Family 20-Pin IMOX Programmable Array Logic PAL Elements D istinctive C h a ra cte ristics • • • • AM D’s superior IMOX technology - G u aran tees tpp = 15 ns Max. " B " Versions High-Speed, Half-Pow er ( " A L " ) and Q uarter-Pow er


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    20-Pin AmPAL16R8 8103614RX PDF

    Contextual Info: OPERATIONAL DESCRIPTION M A X IM U M GU ARAN TEED RATINGS* Operating Temperature Range . 0 ° C to + 7 0 °C Storage Temperature Range . -5 5 ° C to + 1 5 0 ° C


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    D0-D31 D0-D31 PDF

    PS18

    Abstract: SV18
    Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 NTC X16 T16 NTC IK10 X16 AC1 F1 Pin arangement see outlines Features


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    75-12P1 75-12P1 81T120 PS18 SV18 PDF

    Contextual Info: LM108A-F.T • LM208A-F.T • LM308A-F.T FEATURES • OFFSET VOLTAGE GU ARANTEED L E S S THAN 0.5mV CO MPENSATIO N CIRCUITS PIN CONFIGURATION STA N D A RD C O M P EN SA T IO N C IRC U IT • M A XIM U M INPUT B IA S C U RREN T OF 3.0nA OVER T EM PERA TU RE


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    LM108A-F LM208A-F LM308A-F 400pA 30IVA, LM108A, LM208A 500mW LM308A PDF

    Contextual Info: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 L9 P 18 R 18 NTC Preliminary data sheet 1 L4 L6 F10 K 13 K10 Pin arangement see outlines


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    VHM40-06P1 B25/50 PDF

    Contextual Info: VWI 20-06P1 IC25 = 19 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack in ECO-PAC 2 Preliminary S9 N9 X 18 L9 N5 A1 R5 W 14 C1 A5 D5 H5 K 10 Pin arangement see outlines F3 G1 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES


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    20-06P1 PDF