3CS TRANSISTOR Search Results

transistors BC 543

Abstract: TRANSISTOR BC 748 transistor BC 543
Contextual Info: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration

marking 3cs

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50

C2373

Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

5b1 transistor

Abstract: transistor 5B1 H12E
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

marking Ht SOT-363

Abstract: 3h250 FT12E 3cs transistor
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

BC857S

Abstract: VPS05604
Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

2N956

Abstract: 2N718A N718A
Contextual Info: 3QE D • 7^5 3 7 aoaioa? 5 ■ T~- 3 5 -ic] SGS-THOMSON 2 N 718A 2 N 956 iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten­ ded for high-speed switching and amplifier applica­

BC857S

Abstract: VPS05604
Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

VPS05604

Contextual Info: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

sot363 marking DATE code

Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

WD90C11A

Abstract: 3C503 schematic diagram cga to vga converter 3cs12 WD90C11 transistor m014 Transistor 2N2222A equivalent integrated circuit 74LS151 Western digital 8514 interfacing of RAM and ROM with 8088
Contextual Info: WD90C11IWD90C11A TABLE OF CONTENTS Section Title 1.0 INTRODUCTION 1.1 Document Scope 1.2 Features 1.3 General Description 13-1 13-1 13-1 13-2 2.0 WD90C11 A ARCHITECTURE 2.1 WD90C11 (A) Modules . 13-3 13-3 3.0 WD90C11 (A) INTERFACES 3.1 CPU and BIOS ROM Interface

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Abstract: transistor marking E2 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

WD90C30

Abstract: PARADISE VGA wd90c31 paradise pvga1a pvga1a western digital 286 286 dram schematic cga video 6845 3c3h ramdac
Contextual Info: WD90C30 TABLE OF CONTENTS Page Section Title 1.0 INTRODUCTION 1.1 Features 17-1 17-1 2.0 WD90C30 ARCHITECTURE 17-2 3.0 WD90C30 INTERFACES 3.1 CPU And BIOS ROM Interface 3.2 DRAM Interface 3.3 Video Interface . . . . . . 3.4 Clock Interface . . . . . . 3.5

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

TS280-A89Z

Contextual Info: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a

Contextual Info: TCD5130AC GENERAL TCD5130AC is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera PAL/SECA M TV system . This device has signal pixels of 754 (horizontal) x 583 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times

CRTC 6845

Abstract: WD90C33 pin diagram of LED dot matrix display 32x32 PARADISE 80486 interface EQUIVALENCE CMOS 4047 vlsi 386sx PARADISE VGA cga video 6845 Western digital 8514
Contextual Info: D A'U 5-11 E ET WD90C33 High Performance VGA Controller ~ WESTERN DIGITAL Copyright 1993 Western Digital Corporation All Rights Reserved Information furnished by Western Digital Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Western Digital Corporation for its use; nor for any infringements of