3C TRANSISTOR Search Results

Contextual Info: User's Guide SBOU047 – April 2007 DEM-OPA-SSOP-3C Demonstration Fixture 1 Description The DEM-OPA-SSOP-3C demonstration fixture is a non-inverting configuration, unpopulated printed circuit board PCB for high-speed triple operational amplifiers in SSOP-16 packages with flow-through

Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AP3842C/3C/4C/5C General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 - MARCH 1995_ ' PARTMARKING DETAIL - FMMTA20 - 1C FMMTA20R - 3C COMPLEMENTARY TYPE FMMTA70 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage

2N3054

Contextual Info: SVNTC Power Transistors 2N3054 Silicon NPN Transistors 1B 2E 3C Features •With TO-66 package ·Designed for general-purpose switching and amplifier applications Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER

BF195

Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Contextual Info: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 PARTMARKING DETAILS: FMMTA20 - 1C FMMTA20R - 3C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Emitter Voltage VALUE UNIT V V CEO 40 Emitter-Base Voltage V EBO 4 V Continuous Collector Current 'c

FMMTA20R

Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO

2SC1030

Contextual Info: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage

sot89 MARKING 3C

Abstract: transistor KIA431BF GRADE KIA431B sot-89
Contextual Info: SEMICONDUCTOR KIA431BF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3C KIA431BF * Grade - - Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

Contextual Info: M OTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3C 03H D Medium Power Surface Mount Products Motorola Preferred Device C om plem entary TMOS Field E ffect Transistors COMPLEMENTARY DUAL TMOS POWER FET

Darlington pair

Abstract: Darlington pair IC schematic ULN2800A-Series ULN2804A
Contextual Info: ULN2804A DARLINGTON TRANSISTOR ARRAY SLLS311 -J U N E 1998 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY 500-mA-Rated Collector Current Single Output N DUAL-IN-LINE PACKAGE (TOP VIEW ) High-Voltage Outputs . . . 50 V 1C Output Clamp Diodes 2C 3C

"to-98" package

Abstract: 2N5172
Contextual Info: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUW58 Silicon NPN Transistors IB 2E 3C Features With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage

sot323 marking code VL

Abstract: PMSS3906 transistor p06
Contextual Info: • b bS 3cì31 0025127 ÒSI « A P X N AMER PHILIPS/DISCRETE b7E Philips S em iconductors P roduct specification PNP general purpose transistor PMSS3906 FEATURES • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, primarily intended for use

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

RFM18N08

Abstract: RFM18N10 RFP18N08 RFP18N10
Contextual Info: cil B Ë | 3Û7SD01 001Û177 4 3875081 G E SÖLID STATE 01E 18177 D T~3C ~ 3 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 File Number 1446 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A, 80 V — 100 V ros(on): 0.1fi Features:

FF100R12KF2

Contextual Info: FF 100 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,095 3C/W Rthjc DC, pro Baustein / per module 0,19 DC/W DC, pro Zweig / per arm 0,04 C/W RthCK pro B a u ste in /p e r module

012-J

Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)

8C337

Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Contextual Info: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

smd code marking rf ft sot23

Abstract: TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR CMBT5179 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3C Designed for use in Low Noise UHF/VHF Amplifiers

NV73A2A

Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)

324 3842

Abstract: 3842 PWM power supply application note ua 3842 TRANSISTOR AZ431 AP384XC PWM IC 8 PIN DIP 3842 ap3842 3C15
Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external