3C TRANSISTOR Search Results

Contextual Info: User's Guide SBOU047 – April 2007 DEM-OPA-SSOP-3C Demonstration Fixture 1 Description The DEM-OPA-SSOP-3C demonstration fixture is a non-inverting configuration, unpopulated printed circuit board PCB for high-speed triple operational amplifiers in SSOP-16 packages with flow-through

Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AP3842C/3C/4C/5C General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 - MARCH 1995_ ' PARTMARKING DETAIL - FMMTA20 - 1C FMMTA20R - 3C COMPLEMENTARY TYPE FMMTA70 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage

2N3054

Contextual Info: SVNTC Power Transistors 2N3054 Silicon NPN Transistors 1B 2E 3C Features •With TO-66 package ·Designed for general-purpose switching and amplifier applications Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER

BF195

Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Contextual Info: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

FMMTA20R

Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO

2SC1030

Contextual Info: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage

sot89 MARKING 3C

Abstract: transistor KIA431BF GRADE KIA431B sot-89
Contextual Info: SEMICONDUCTOR KIA431BF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3C KIA431BF * Grade - - Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

Darlington pair

Abstract: Darlington pair IC schematic ULN2800A-Series ULN2804A
Contextual Info: ULN2804A DARLINGTON TRANSISTOR ARRAY SLLS311 -J U N E 1998 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY 500-mA-Rated Collector Current Single Output N DUAL-IN-LINE PACKAGE (TOP VIEW ) High-Voltage Outputs . . . 50 V 1C Output Clamp Diodes 2C 3C

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUW58 Silicon NPN Transistors IB 2E 3C Features With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

324 3842

Abstract: 3842 PWM power supply application note ua 3842 TRANSISTOR AZ431 AP384XC PWM IC 8 PIN DIP 3842 ap3842 3C15
Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

3842 PWM power supply 12v 5a

Abstract: ic 3842 datasheet la 3842 st 3842 data PWM IC 8 PIN DIP 3842 AP384XC pc817 application note 3842 PWM power supply application note transistor 5cp
Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

TRANSISTOR AZ431

Abstract: 3842 PWM power supply application note 3842 PWM power supply 12v 5a PWM IC 8 PIN DIP 3842 AP3845c AP384XC transistor 5cp 1N4001-7 AP-384
Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

MPS5179

Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
Contextual Info: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FM M TA20 PARTMARKING DETAILS: FM MTA20 - 1C FMMTA20R - 3C ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL VALUE UNIT V C o lle c to r-E m itte r V oltage V CEO 40 E m itter-B ase V oltage V EBO 4 V 100 mA 330 mW

transistor BC 153

Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series
Contextual Info: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF

Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Contextual Info: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.