3BS TRANSISTOR Search Results

2N3865

Abstract: 2N3233 2N1069 2N3239 2N3238 2N3236 2N3235 2N3232 2n3713 2N1488
Contextual Info: 8365700 SOLID POWER CORP ‘SOLID POWER CORP 95C 0 0099 0 TDF|fi 3bS 7DD DOOODÌT b f TS POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c b o BV ceo BV ebo Ic V V V A V Sat Test Voltages Conditions VcE V be Ic Ib V V A A @ hFE MIN MAX Ic A

AT-60585

Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
Contextual Info: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz

Contextual Info: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.

7423PC

Abstract: 00k3
Contextual Info: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE

3BS transistor

Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.

Contextual Info: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. 7.4 7.8 B 10.5 10.8 C 2 .4 2.7 D 0.7 0.9 A 2 .2 5 TYP. E

3BS transistor

Contextual Info: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from

BD157

Abstract: BD158
Contextual Info: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.

2SC509

Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±

h 669A

Abstract: 2SD1270 C-123 2SB945 2SD1271
Contextual Info: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )

top marking 1B sot23

Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

2N4124

Abstract: 2N4123 2N4125 2N4126
Contextual Info: N AMER PHILIPS/DISCRETE bTE J> m bb53R31 0D2fllS2 42*1 IAPX Ü N 41Ü Ô 5 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-power, small-signal audio­ frequency applications fo r consumer service.

MARKING 3FS

Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

Contextual Info: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)

BD722

Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Contextual Info: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and

C2335

Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Contextual Info: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN

3BS transistor

Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

transistor packing code 3f

Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

3BS transistor

Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Contextual Info: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,

transistor BD939F

Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.

BC 511

Abstract: Q62702-C2295 MARKING 3FS
Contextual Info: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,

3BS transistor

Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75