3BE0 Search Results

80386DXL

Abstract: WT 7525 80286 microprocessor paging mechanism microprocessor 80288 INTEL 386DX Audi b5 8086 microprocessor pin description interfacing of memory devices with 80286 power module hd 110M TAG 8816
Contextual Info: ADVANCE] MICRO D E V I C E S 4ÖE D • G 2 57 52 5 G 0 4 1 3 0 4 5 ■ A U D I T - ^ - n -y \ Am386 DXL Advanced Micro Devices High-Performance, Low-Power, 32-Bit Microprocessor DISTINCTIVE CHARACTERISTICS ■ Ideal for portable PCs -True static design for long battery life

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

MB90F0

Abstract: H352 MB90F931
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM44-10150-1E F2MC-16LX 16-BIT MICROCONTROLLER MB90930 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90930 Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site.

FZH 191

Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Contextual Info: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

S70GL01GN00

Abstract: S29GL01GP S29GL512N
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP

2B60000

Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

toko 10k series

Abstract: OF IC 713 3BE0 712 marking D1993
Contextual Info: ÎSTOKO TK711/712/713 LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ Battery Powered Systems ■ Low Quiescent Current ■ Portable Consumer Equipment ■ Very Stable Output ■ Cordless Telephones ■ Extremely Small Package SOT25

b1l3

Abstract: Si3225 ProSLIC Q1 25C2 AN58
Contextual Info: AN58 S i 3 2 2 0 / S i 3 2 2 5 P ROGRAMMER ’S G UIDE 1. Si3220/Si3225 RAM & Register Space The Si3220/Si3225 is a highly-programmable telephone linecard solution that uses internal registers and RAM to program operational parameters and modes. The register and RAM space are explained in this

gl256N

Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

271062

Abstract: M82965
Contextual Info: in te i M82965 FAULT TOLERANT BUS EXTENSION UNIT Military Multiprocessor Support — Connect up to 32 Processor and Memory Modules In a Single System Message Passing — Supports Interagent Communication — Redundant Error Reporting Network Multiple Bus Support with No External

ic 3525

Abstract: UPD17008 IC-3525 X256500 3360-H 4C40H
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD17068 4-BIT SINGLE-CHIP MICROCONTROLLER CONTAINING IMAGE DISPLAY CONTROLLER AND PLL FREQUENCY SYNTHESIZER FOR DIGITAL TUNING SYSTEMS The µPD17068 is a 4-bit single-chip microcontroller for digital tuning systems. It contains an image display

SA418

Abstract: 346000 S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

2C200

Abstract: S29GL S29GL128P S29GL512P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-N S29GL-P
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

A 27631

Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

S29GL512N datasheet

Abstract: Spansion S29GL256N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

JS28F512M29EWL

Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

voltage variable phase shifters

Abstract: CPU10b 90 HYBRID 70 mhz smd TRAK EUROPE 150-A05 bnc 7001
Contextual Info: TR4K.MICROIÌHVE A Tech Sym C om pany RF and IF Signal Processing Com ponents Pow er S plitters See Style -01 .19 MAX .50 • FREQUENCY AMP BAL PHASE BAL ISO IMPEDANCE SPÜ2BE-01 4-1000 MHz 0.1 dB typ 1 DEGREE 25 dB 50 ohms SPL/2BE-01/75 4-1000 MHz 0.1 dB typ