3B5 TRANSISTOR Search Results

IT136

Abstract: IT137 IT138 IT139 XIT137 XIT138
Contextual Info: IT136-IT139 CAL06IC CORP_ M8E D • W 3B5 000D3bS l « C 6 C calocft Monolithic Dual PNP General Purpose Amplifier CORPORATION V IT136-IT139 FEATURES • • • • • High Gain at Low Current Low Output Capacitance Tight Ib Match Tight V b e Tracking

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

Contextual Info: CL-GD6420 Preliminary Data Sheet FEATURES • Slngle-chlp VGA controller ■ Pin-compatible with the CL-GD6410 In 2-DRAM applications ■ Up to 1 Mbyte 2,4, or 8 256K x 4 ORAM Video Memory ■ Extended resolution up to 1024 x 768 with 256 colors on CRT ■ Simultaneous display on LCD panel and CRT

toshiba laptop battery pack pinout

Contextual Info: CL-GD6410 'CIRRUS LOCK: Preliminary Data Sheet FEATURES • Slngle-chlp VGA controller ■ ■ ■ ■ 100% IBM -VGA-hardware-compatlble Simultaneous CRT and LCD SlmulSCAN operation Two 256K x 4 DRAM video memory for small form factor Integrates RAMDAC

laptop cq 42 MOTHERBOARD VOLTAGE diagram

Abstract: IBM t 42 laptop ac adapter schematics diagram laptop motherboard chip level crb 8088 motherboard schematics IBM computer schematics 8088 D-6412 cl-gd64 isa bus interfacing with microprocessor 8088 IBM PC xt schematics Crystal aa class lord
Contextual Info: CL-GD6412 'CIRRUS LOGIC Preliminary Data Sheet FEATURES LCD VGA Controller for Mixed Voltage Notebook Computers • Single-chip VGA Controller ■ Mixed voltage: 3.3 or 5.0 volts on any major Interface - Supports JEDEC Number 8 LVCMOS standard 3.3V +/- 0.3V

sot-23 Marking pcA

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 • For general A F applications • High collector current • High current gain • Complementary types: B C V 26, B C V 46 PNP Type Marking Ordering Code (tape and reel) PinC :onfigur ation 2 1 3

laptop motherboard chip level crb

Abstract: CL-GD5320 LAPTOP Motherboard CHIP LEVEL book GD610 CL-GD610 gd5320 GD6340 gd510 CL-GD6410 cirrus logic gd610
Contextual Info: CL-GD6420 Data Book FEATURES • Single-chip VGA controller ■ Pin-compatible with the CL-GD6410 in 2-DRAM applications High-Resolution LCD VGA Controller for Notebook Computers ■ Up to 1 Mbyte 2, 4, or 8 256K x 4 DRAM Video Memory ■ Extended resolution up to 1024 x 768 with 256 colors on

siemens BL 350

Abstract: marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT
Contextual Info: B CR 400 P relim in ary Data A c tiv e Bias C o n tro lle r C h a ra c te ris tic s • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A p p lic a tio n notes • Stabilizing bias current of NPN transistors and FET's from

D72F5T1

Abstract: D72F5T2 D73F5T1
Contextual Info: HARRIS SEMICOND SECTOR F ile Num ber 2363 SbE D • 43G2271 0040flS4 42e} HIHAS D72F5T1, D72F5T2 7 = 3 5 - \3 5-Ampere Silicon N-P-N Power Transistors TER M IN AL DESIG N ATIO N Features: ■ Low Vcs sat m Fast switching speed ■ Complementary to D73F5T1,2

f173

Contextual Info: SG S-TH O M SO N S D 1 2 7 5 -0 1 m RF & MICROWAVE TRANSISTO RS VHF MOBILE APPLICATIONS 1 60 MHz 13.6 VOLTS COMMON EMITTER p OUT = 40 W MIN. WITH 9.0 dB GAIN PIN CONNECTION V \ DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

Contextual Info: • bbS3T31 Q 0 2 S W T45 W A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SM D envelope SOT-223 . Designed prim arily fo r high-speed switching and driver applications.

smd transistor 2t1

Abstract: smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot
Contextual Info: • bbS3T31 GÜ25Iîcn T45 « A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SMD envelope SO T-223 . Designed prim arily fo r high-speed switching and driver applications.

Contextual Info: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b

Contextual Info: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

Contextual Info: 4302271 00S4453 42t • HAS RFK45N05 H a r r is RFK45N06 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 4 A E • 45 A , 5 0 V and 6 0 V • l'DS on = 0 .0 4 0 ÎÎ • S O A is P o w er-D issip atio n Lim ited

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

t07 transistor

Contextual Info: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

MCA45T

Abstract: capacitor philips ll
Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Contextual Info: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE b 'Ì E D • ^53^31 OOE fiôEM T 3 0 I B L U 3 U /1 i> I APX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 4 7 0 M Hz communications band. Features:

mda324

Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

Contextual Info: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain

BU508A

Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 transistor BU508D BU-508A
Contextual Info: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in S O T 9 3 A envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The B U 508 D has an integrated efficiency diode.