3N170 Search Results

3N170

Contextual Info: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

3N170

Abstract: 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch LLC 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input

3n169

Contextual Info: TYPES 3N169, 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 8 3 . M A R C H 1 9 7 3 EN H A N C E M E N T-T Y P E t MOS SILIC O N TRAN SISTO RS For Applications Requiring Very High Input Impedance, Such as

3N169

Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
Contextual Info: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5

intersil jfet

Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

Contextual Info: 3N170. 3N171 LINEAR SYSTEMS N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems Cr Ct A1 A T I1D C C . Unto. . VERY HIGH INPUT IMPEDANCE

1322

Contextual Info: 3N170 25 V - N-Channel Enhancement Mode MOSFET Switch 13.22 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N170 Online Store 3N170 Diodes 25 V - N-Channel Enhancement Mode MOSFET Sw itch Transistors Integrated Circuits Optoelectronics

3N165

Abstract: 3N170 3N171
Contextual Info: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)

Contextual Info: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device

3N170-1

Abstract: 3N170 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input

3N170

Abstract: Hall 01E 3N171
Contextual Info: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­

amelco

Abstract: UNION CARBIDE
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

3n170 intersil

Abstract: amelco
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

3N171

Abstract: VN10MA C 828
Contextual Info: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device

3N170

Abstract: 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: OPTEK TECHNOLOGY INC 4fiE D ¡C “ " • bTTflSûO Q00144S Tl? ■ Preliminary OTK 0 OPTEK Surface Mount Switching MOSFET Transistor Type HCT810 .075(1.90 .061(1.55) .225(5.71) .215(5.46) .155(3.93) .145(3.68) ■z PIN 1 INDENTIFIER DRAIN .028(0.71, .

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

3N163

Abstract: 3N164 3N170
Contextual Info: G E SOLI» STATE DE|3fl7S0fil D Gli DIS 1 | DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)

S0211

Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

2N4351 MOTOROLA

Abstract: 3N170 3c169 DFM12 3N169
Contextual Info: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation