3D30B Search Results

Contextual Info: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

VTE5880

Contextual Info: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )

Corning 7052

Abstract: 7052 glass DT-25 DT-110
Contextual Info: E G & G JUDSON 5 7E D • 3D30b0S GGOQnS b ■ DT Series Features • • • • Planar Diffused Oxide Passivated Guard Ring Construction Wide Spectral Range • • • • Low Noise Large Area Fast Rise Time Wide Dynamic Range Operating Data and Specifications at 23°C: Typical Performance at 100 V Bias

VTB5051

Abstract: 3500/04 B5050 VTB5050
Contextual Info: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.

rca 036

Abstract: C30957E photodiode demodulation
Contextual Info: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

VT83B

Abstract: VT-83B
Contextual Info: PACKAGE DIMENSIONS inch mm 1.38(35.051 .070 (1,78) • 3D30bG'i .216(5.49) 4 «VCT 0Q007EE VT800 Series LIGHT DEPENDENT RESISTOR 33E D LEAD DIA. £ PLASTIC COATINQ NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30642E

Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
Contextual Info: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -

31AA

Abstract: CLD31 VTD32 VTD32AA
Contextual Info: SbE D 3D30b0^ □□01120 am • VCT VTD32, VTD32AA VTP Process Photodiodes C L D 3 1 . 3 1 AA L A R G E CH I P I N D U S T R Y EQUIV. E 8. G G VACTEC T-41-51 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)

light dependent resistor,

Abstract: light dependent resistor Scans-002683 VT70A302 vt700 Light-Dependent Resistor VT701 VT702L VT704 VT70A144
Contextual Info: LIGHT DEPENDENT RESISTOR QQQQ724 i MVCT f T-<41-41 V T 7 0 0 S e r ie s PACKAGE DIM ENSIO N S inch mm .300 (7.62) .070( 1.78) 1.38 (35.05) 3D30b£H AW0 24 TINNED COPPER LEADS • 255 (6.48) 275 (6.99) LEAD DIA. t RUSTIC COATINQ NOT CONTROLLED WITHIN .10 (2.5)

HgCdTe

Abstract: J15TE4 J15TE3 preamp MC31G HGCDTE detector judson PA-090 EG&G PA-080 judson PA-100
Contextual Info: E G & G JUDSON 3T E J15TE Series T> m 3D30b0S 0000237 7 M JUD Long-Wave Mercury Cadmium Telluride Detectors 10.6 |Lim T-yj-v/ General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser detection at 10.6|am.

31AA

Abstract: CLD31 VTD32 VTD32AA
Contextual Info: 5bE D 3D30b0^ GOOllSD AMI B V C T VTD32, V T D 3 2 A A VTP Process Photodiodes C L D 3 1 . 3 1 A A L A R G E C H I P I N D U S T R Y EQUIV. E G & G VACTEC T-41-5 1 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)

VTP4050

Abstract: VTP4050S
Contextual Info: 5bE D • 3D30b[H 0001073 ITS H V C T V T P 4 0 5 0 , 40 50S VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm V ' :- PRODUCT DESCRIPTION .0 6 7 ( 1.7 0 ) .3 0 5 ( 7 . 7 5 ) CASE 13 Planar silicon photodiode mounted on a two lead ceramic substrate and

250BG

Contextual Info: E G & 6/CANADA/0PT0ELEK 47E 3D30blü I> 0QD030f l 4 • CANA UV Series -V /-5 1 Features • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • Linearity Over Wide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

VTP6060

Contextual Info: VTP Process Photodiodes VTP6060 P A C K A G E D IM E N SIO N S inch mm P R O D U C T D ESC R IP T IO N CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. Cathode is common to the case.

vactrol

Abstract: vactec vactrol vtl1a3 VTL1A3 vactec vactrol vtl1b5 Photoresistor neon lamp 220 volt VTL1A4 VTL186 lem HA
Contextual Info: ¡3 “ is Material FI HERMETIC SEALED VACTROL 2° C l VACTEC Copyrighted VACTEC P i Bulletin VTL-1 By Its Respective M A X IM U M RATINGS lOOmW — derate 2mW/’ C above 25°C case temperature — 55*C to -f- 70“C operating and storage Case temperature 4

flashtubes

Abstract: photodiodes
Contextual Info: VTS VTS Process Photodiodes P R O D U C T DESCRIPTION P A C K A G E DIM ENSIONS 86 inch mm These planar, P on N, large area silicon photodiodes are characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity

Contextual Info: VTP8440 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.

Contextual Info: VTP1112 VTP Process Photodiodes C ASE 19 PRODUCT DESCRIPTION T O -4 6 LENS ED HERM ETIC „, CHIP A C TIV E A R E A : .0025 ¡ i f 1.6 m m2l Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under

SIECOR Fiber Optic cable

Contextual Info: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

IC 7405

Abstract: UV diode 200 nm UV-100BG uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode
Contextual Info: UV Series: 3030hG5 QGODlbS E7E D E G & G JU DSON Multi-Element Features • • • • ô Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure Peak Responsivity: 0.62 A /W at 900 Nanometers

25CC

Abstract: VTL11D1 VTL11D3 VTL11D5-20 VTL11D6-20 VTL11D7
Contextual Info: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith an NPN phototransistor in a one piece, sealed, IR transm itting plastic case.