36T2 Search Results

GS832018GT-225I

Abstract: GS832036GT-250I 36T2 GS832018 GS832018T-166 GS832018T-200 GS832018T-225 GS832018T-250 GS832032 GS832036
Contextual Info: Preliminary GS832018/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features cycles can be initiated with either ADSP or ADSC inputs. In

Contextual Info: Product Preview GS8320ZV18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Features when the device is switched from read to write cycles. • NBT No Bus Turn Around functionality allows zero wait

A2-A20

Contextual Info: Preliminary GS832018/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation

Contextual Info: GS8160Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

Contextual Info: Revision: 9/26/02 GS8161Z18/32/36D Supplemental Datasheet Information This supplemental information applies to the GS8161Z18/36T datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is only

GS816118D-133

Abstract: GS816118D-150 GS816118D-166 GS816118D-200 GS816118D-225 GS816118D-250 GS816132D-250
Contextual Info: Revision: 9/26/02 GS816118/32/36D Supplemental Datasheet Information This supplemental information applies to the GS816118/36T datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is only

Contextual Info: GS8320E18/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct Flow Through/Pipeline Reads The function of the Data Output register can be controlled by

Contextual Info: Preliminary GS816018/32/36T-250/225/200/166/150/133 1M x 18, 512K x 32, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation

Contextual Info: Preliminary GS816118/36T-225/200/180/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

T097376

Contextual Info: Semiconductor fuses Semiconductor AC fuses Other Protistor Fuses BS88-4 Fuses 36x55, 2x36x55 - 690 VAC EXTREMELY HIGH BREAKING CAPACITY FUSES: PROTECTION OF POWER SEMICONDUCTORS AS PER IEC STANDARD 60269.1 AND 4 690 V VOLTAGE RATING COMPLYING WITH IEC 33

GS8160Z18T

Abstract: GS8160Z18T-250 GS8160Z36T
Contextual Info: GS8160Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

GS8160Z18T

Abstract: GS8160Z18T-225 GS8160Z36T
Contextual Info: Preliminary GS8160Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow through 225 MHz–133 2.5 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

GS8161E18

Abstract: GS8161E18T-250 GS8161E36 A13478
Contextual Info: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan

GS8150E18T-225

Abstract: 36T22
Contextual Info: Preliminary GS8150E18/32/36T-225/200/180/166/150/133 1M x 18, 512K x 32, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

qe-2000

Abstract: 328A15
Contextual Info: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

Contextual Info: Preliminary GS8320Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAMs Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

GS8320E18

Abstract: GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36 GS8320E18T166
Contextual Info: Preliminary GS8320E18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O interleave order with the Linear Burst Order LBO input. The

GS8320EV18

Abstract: GS8320EV18T-150 GS8320EV18T-166 GS8320EV18T-200 GS8320EV18T-225 GS8320EV32 GS8320EV36
Contextual Info: Preliminary GS8320EV18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O interleave order with the Linear Burst Order LBO input. The

GS8320Z18T

Abstract: GS8320Z18T-225 GS8320Z18T-250 GS8320Z36T
Contextual Info: Product Preview GS8320Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: Preliminary GS8161Z18/36T-200/180/166/150/133 100 Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow through Synchronous NBT SRAM Features • User configurable Pipelined and Flow through mode. • NBT No Bus Turn Around functionality allows zero wait ReadWrite-Read bus utilization. Fully pin compatible with both pipelined

Contextual Info: Preliminary GS8160E18/32/36T-225/200/180/166/150/133 1M x 18, 512K x 32, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

GS816118

Abstract: GS816118T-225 GS816118T-250 GS816136 A13478
Contextual Info: Preliminary GS816118/36T-250/225/200/166/150/133 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply