35MEV Search Results

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

IS-1845ASRH

Contextual Info: Single Event Testing of the IS-1845ASRHPulse Width Modulator Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event transient (SET) and

2N7313

Abstract: Rad Hard in MOSFET power p channel mosfet rad hard
Contextual Info: HARRIS SEI UCOND SECTOR m H A R R IS U U H arris rc a • oi • D • OBJECTIVE S E M I C O N D U C T O R • 40E 0Q33Û3M T MHAS 2N7313R, 2N7313H n r-.n I .n REG ISTRATIO N PENDING Available As FRM 9430R, FRM9430H in te r s il ' M3G2271 _ i I 11 1 .5 A .-5 0 0 V

2N7326

Contextual Info: i HARRIS U a J HARRIS S E M I C O N D U C T O R RCA GE M305S71 0033647 8 « H A S 4QE J> HARRIS SEPIICONI SECTOR OBJECTIVE 2N7326R, 2N7326H REGISTRATION PENDING Available As FRM9450R, FRM9450H INTERSIL _ 6A, -5 0 0 V RDS on =1.80n This Objective Data Sheet Represents the Proposed Device Performance.

2N7332

Contextual Info: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.

Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q

Contextual Info: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993

5962F0251101VXC

Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
Contextual Info: IS-1825ASRH TM Data Sheet February 2002 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high

Contextual Info: NOT RECOM MENDED FO R NEW DESIG R E C O MME N NS DED REPLA CEMENT PA ISL7884XAR R T H, ISL7884X AEH Single Event Radiation Hardened High Speed, Current Mode PWM IS-1845ASRH, IS-1845ASEH Features The IS-1845ASRH, IS-1845ASEH are designed to be used in switching

Contextual Info: HARRIS SEMICON] SECTOR SfiE D • M3QEE71 DDMS772 GIT B H A S 2N7305D, 2N7305H 2N7305H HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H) Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Features • 17A, 500V, RDS{on) x 0.400»

Contextual Info: HARRIS SENICOND SECTOR 30 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK260 D, R, H • 4 3 0 2 27 1 0 0 4 5 7 b 2 17G H H A S 2N7301D, 2N73U1H 2N7301H Radiation Hardened N-Channel Power MOSFETs December 1992 T & f- iS

Contextual Info: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

IS-1845ASRH

Abstract: CDIP2-T8
Contextual Info: IS-1845ASRH TM Data Sheet November 2000 Single Event Radiation Hardened High Speed, Current Mode PWM File Number 9001 Features • Electrically Screened to DSCC SMD # 5962-01509 The IS-1845ASRH is designed to be used in switching power supplies operating in current-mode. The

k20a

Abstract: IS1825ASRH IS9-1825BSEH-Q ISL71823ASRHVX
Contextual Info: Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, ISL71823BSRH The single event and total dose hardened pulse width Features modulators are designed to be used in high frequency, switching power supplies in either voltage or current-mode

2E12

Abstract: 2N7318D 2N7318H 2N7318R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H 2N7318D, 2N7318R 2N7318H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 7A, -200V, RDS(on) = 0.720Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

FRL230* harris

Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

DIODE 1334 LM

Abstract: 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7322D 2N7322H 2N7322R 86 diode
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9150 D, R, H 2N7322D, 2N7322R 2N7322H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -100V, RDS(on) = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7330

Abstract: 2E12 2N7330D 2N7330H 2N7330R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9260 D, R, H 2N7330D, 2N7330R 2N7330H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -200V, RDS(on) = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

Rad hard MOSFETS in Harris

Abstract: 2E12 2N7324D 2N7324H 2N7324R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9250 D, R, H 2N7324D, 2N7324R, 2N7324H Radiation Hardened P-Channel Power MOSFETs April 1996 Features Package • 16A, -200V, RDS(on) = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7271D 2N7271H 2N7271R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 14A, 100V, RDS(on) = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7273H 2N7273R
Contextual Info: S E M I C O N D U C T O R vp2N7273D, 2N7273R 2N7273H REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 12A, 100V, RDS(on) = 0.195Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

17741

Abstract: 2N7316D 2N7316H 2N7316R 2E12 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9140 D, R, H 2N7316D, 2N7316R 2N7316H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 11A, -100V, RDS(on) = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

ta17741

Abstract: 2N7317D 2E12 2N7317H 2N7317R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9140 D, R, H 2N7317D, 2N7317R 2N7317H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 11A, -100V, RDS(on) = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts