2N7323 Search Results
2N7323 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
2N7323D | Harris Semiconductor | Radiation Hardened P-Channel Power MOSFETs | Original | 55.13KB | 5 | ||
2N7323H | Harris Semiconductor | Radiation Hardened P-Channel Power MOSFETs | Original | 55.13KB | 5 | ||
2N7323R | Harris Semiconductor | Radiation Hardened P-Channel Power MOSFETs | Original | 55.13KB | 5 |
2N7323 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
2N7323D, 2N7323R 2N7323H FRF9150 -100V, O-254AA 1000K 3000K 1-800-4-HARRIS | |
DIODE 1334 LM
Abstract: 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323
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Original |
FRF9150 2N7323D, 2N7323R 2N7323H -100V, O-254AA 1000K 3000K 3E14ights 1-800-4-HARRIS DIODE 1334 LM 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323 | |
Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -1 00V, rDS(ON) = 0.14 0 ft TO-254AA • Second Generation Rad Hard M O SFET Results From New Design Concepts |
OCR Scan |
FRF9150 2N7323D, 2N7323R 2N7323H O-254AA 1000K 3000K 1-800-4-HARR | |
Contextual Info: 2N7323H4 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D)15 @Temp (øC)100 IDM Max (@25øC Amb)69 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55 |
Original |
2N7323H4 | |
Contextual Info: 2N7323H1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D)15 @Temp (øC)100 IDM Max (@25øC Amb)69 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55 |
Original |
2N7323H1 | |
Contextual Info: 2N7323H2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D)15 @Temp (øC)100 IDM Max (@25øC Amb)69 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55 |
Original |
2N7323H2 | |
2N7323Contextual Info: m l- L A J R F R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 23A, -100V, ROS(on) « 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
FRF9150 2N7323D, 2N7323R 2N7323H O-254AA -100V, 300KRAD 1000KRAD 3000KRAD 35MeV/mg/cmJandUNCLAMPED 2N7323 | |
Contextual Info: 2N7323H3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D)15 @Temp (øC)100 IDM Max (@25øC Amb)69 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55 |
Original |
2N7323H3 | |
Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70 |
OCR Scan |
43Q2271 126X182 FRM230D FRM234D FRM430D FRL130D | |
B402-6Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080 |
OCR Scan |
O-205AF O-258AA FRE160, 2N7300 FRE260, 2N7302 FRE264, 2N7304 FRE460, 2N7306 B402-6 | |
Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH) |
OCR Scan |
204AA 205AF 257AA 204AE 254AA 258AA | |
FSL430
Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
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Original |
O-205AF O-258AA FRL230, JANSR2N7275 FRL234, JANSR2N7278 FRE160, 2N7300 FRL130, FSL430 FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92 | |
2N7289
Abstract: 2N7308 2N7331
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OCR Scan |
FRM130D FRM130R FRM130H FRM230D FRM230R FRM230H FRM234D FRM234R FRM234H FRM430D 2N7289 2N7308 2N7331 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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OCR Scan |
1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 |