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    343 TRANSISTOR Search Results

    343 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    343 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    55 ic Sot-343

    Abstract: marking 17 sot343 START499ETR st P 1806 START499E start499etr spice
    Contextual Info: START499ETR NPN RF silicon transistor Features • High efficiency ■ High gain ■ Linear and non linear operation ■ Transition frequency 42 GHz ■ Ultra miniature SOT-343 SC70 lead free package SOT-343 Applications ■ PA for dect or PHS ■ PA stage for wireless LAN


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    START499ETR OT-343 START499ETR OT-343 55 ic Sot-343 marking 17 sot343 st P 1806 START499E start499etr spice PDF

    4066 spice model

    Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
    Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


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    MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900 PDF

    318M

    Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
    Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


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    MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna PDF

    matsushita conduit

    Abstract: matsushita electrical conduit nais relay 24V high speed LC2H nais relay 24V r relay EN61000-4-2 EN61000-4-3 EN61000-6-2 EN61000-6-4 EN61010-1
    Contextual Info: LC2H LC2H Counters DIN HALF SIZE LCD COUNTER Features 1. 8.7 mm .343 inch Character Height previously 7 mm Easy-to-read character height increased from 7 mm to 8.7 mm .276 inch to .343 inch. Panel mounting type One-touch installation type 8.7mm .343inch


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    343inch EN60947-1 EN60947-3 matsushita conduit matsushita electrical conduit nais relay 24V high speed LC2H nais relay 24V r relay EN61000-4-2 EN61000-4-3 EN61000-6-2 EN61000-6-4 EN61010-1 PDF

    OPA343

    Contextual Info: OPA 234 OPA 4 OPA343 OPA2343 OPA4343 3 343 OPA 4 343 www.ti.com SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES APPLICATIONS ● ● ● ● ● ● ● ● DRIVING A/D CONVERTERS ● PCMCIA CARDS ● DATA ACQUISITION


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    OPA343 OPA2343 OPA4343 OPA343 500mV PDF

    constant current diode

    Abstract: E-1071-343 46288 SSRPC OPTO ISOLATOR high temperature "Constant Current diode" 74x128
    Contextual Info: Solid State Remote Power Controller E-1071-343 Description The E-T-A Solid State Remote Power Controller E-1071-343 is a double relay with protective function both for resistive and inductive DC 48 V loads. It is particularly suitable to control upward/downward


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    E-1071-343 E-1071-343 constant current diode 46288 SSRPC OPTO ISOLATOR high temperature "Constant Current diode" 74x128 PDF

    NE76118

    Abstract: NE76118-T1 NE76118-T2
    Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)


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    OT-343) NE76118 24-Hour NE76118-T1 NE76118-T2 PDF

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


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    OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327 PDF

    LL1608-FH

    Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


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    MBC13900/D MBC13900 OT-343) MBC13900T11 MBC13900NT1 MBC13900 SC-70 LL1608-FH MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545 PDF

    0338 transistor

    Abstract: marking r4 SOT343
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


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    MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343 0338 transistor marking r4 SOT343 PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1


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    MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343 PDF

    4066 spice model

    Abstract: LL1608-FH MBC13900 MBC13900T1
    Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package


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    MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model LL1608-FH MBC13900T1 PDF

    Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


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    2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1, PDF

    BGB420

    Contextual Info: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package


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    BGB420 BGB420 OT-343 BFP420. GPS05605 PDF

    HBFP-0450

    Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
    Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    HBFP-0450 SC-70 OT-343) HBFP-0450 5968-5434E 5988-0133EN 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1 PDF

    Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


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    2N2857 MIL-PRF-19500/343 2N2857 2N2857. T4-LDS-0223, PDF

    BJT BF 167

    Abstract: kf 203 e 011 transistor HBFP0450TR1 L 3705
    Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    HBFP-0450 SC-70 OT-343) HBFP-0450 packa00 5968-2070E BJT BF 167 kf 203 e 011 transistor HBFP0450TR1 L 3705 PDF

    transistor kf 469

    Abstract: CMP10 CMP12 HBFP-0420 transistor bf 198 transistor Bf 981
    Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0420 is a high performance isolated


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    HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E transistor kf 469 CMP10 CMP12 transistor bf 198 transistor Bf 981 PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    2N2857

    Abstract: 2N2857 JANTXV
    Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


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    2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTXV PDF

    IC 74196

    Abstract: kf 982 CMP16 2 GHz BJT CMP10 HBFP-0405 ku-band oscillator CMP68 r1565 marking 53 Sot-343
    Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated


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    HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT-343) 5968-0140E IC 74196 kf 982 CMP16 2 GHz BJT CMP10 ku-band oscillator CMP68 r1565 marking 53 Sot-343 PDF

    Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    HBFP-0450 SC-70 OT-343) HBFP-0450 5968-2070E PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    4066 spice model

    Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
    Contextual Info: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor


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    MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice PDF